Eddy Simoen

Publication Activity (10 Years)

Years Active: 2001-2021
Publications (10 Years): 6

Top Topics

Wavelet Analysis

Energy Distribution

Gate Dielectrics

Top Venues

Microelectron. Reliab.

Publications

Abhitosh Vais, Brent Hsu, Olga Syshchyk, Hao Yu, AliReza Alian, Yves Mols, Komal Vondkar Kodandarama, Bernardette Kunert, Niamh Waldron, Eddy Simoen, Nadine Collaert
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. IRPS (2021)
Hao Chang, Longda Zhou, Hong Yang, Zhigang Ji, Qianqian Liu, Eddy Simoen, Huaxiang Yin, Wenwu Wang
Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs. IRPS (2021)
Longda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs. IRPS (2021)
Carlos H. S. Coelho, João Antonio Martino, Marcello Bellodi, Eddy Simoen, Anabela Veloso, Paula Ghedini Der Agopian
Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices. Microelectron. J. 117 (2021)
Eddy Simoen, Alberto Vinicius Oliveira, Anabela Veloso, Adrian Vaisman Chasin, Romain Ritzenthaler, Hans Mertens, Naoto Horiguchi, Cor Claeys
Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors. ASICON (2019)
Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen
Analytical modelling and device design optimisation of epitaxial layer-based III-V tunnel FET. IET Circuits Devices Syst. 13 (6) (2019)
Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectron. Reliab. 54 (11) (2014)
N. Lukyanchikova, N. Garbar, Valeriya Kudina, A. Smolanka, Eddy Simoen, Cor Claeys
Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry. Microelectron. Reliab. 53 (3) (2013)
Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, H.-J. Na, Y. Son, K. B. Noh
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. ESSDERC (2013)
Tommaso Romeo, Luigi Pantisano, Eddy Simoen, Raymond Krom, Mitsuhiro Togo, N. Horiguchi, Jérôme Mitard, Aaron Thean, Guido Groeseneken, Cor Claeys, Felice Crupi
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs. ESSDERC (2012)
Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. Microelectron. Reliab. 52 (3) (2012)
Valeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, Otilia Militaru, Guy Berger, Denis Flandre
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. Microelectron. Reliab. 52 (1) (2012)
Eddy Simoen, Marc Aoulaiche, Anabela Veloso, M. Jurczak, Cor Claeys, L. Mendes Almeida, Maria Glória Caño de Andrade, A. Luque Rodriguez, J. A. Jimenez Tejada, Christian Caillat, Pierre Fazan
On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs. ESSDERC (2012)
Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. González, Montserrat Nafría, Xavier Aymerich, Eddy Simoen
Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs. Microelectron. Reliab. 52 (9-10) (2012)
Javier Martín-Martínez, Esteve Amat, M. B. González, P. Verheyen, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Eddy Simoen
S/D and HfSiON based pMOS transistors. Microelectron. Reliab. 50 (9-11) (2010)
Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys
Study of the linear kink effect in PD SOI nMOSFETs. Microelectron. J. 38 (1) (2007)
Kerem Akarvardar, Abdelkarim Mercha, Eddy Simoen, Vaidyanathan Subramanian, Cor Claeys, Pierre Gentil, Sorin Cristoloveanu
High-temperature performance of state-of-the-art triple-gate transistors. Microelectron. Reliab. 47 (12) (2007)
Paolo Srinivasan, Felice Crupi, Eddy Simoen, Paolo Magnone, Calogero Pace, Durga Misra, Cor Claeys
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks. Microelectron. Reliab. 47 (4-5) (2007)
Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys
Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. Microelectron. J. 37 (8) (2006)
Kiyoteru Hayama, Kenichiro Takakura, K. Shigaki, Hidenori Ohyama, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. Microelectron. Reliab. 46 (9-11) (2006)
L. M. Camillo, João Antonio Martino, Eddy Simoen, Cor Claeys
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs. Microelectron. J. 37 (9) (2006)
Joan Marc Rafí, Eddy Simoen, Kiyoteru Hayama, Abdelkarim Mercha, Francesca Campabadal, Hidenori Ohyama, Cor Claeys
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. Microelectron. Reliab. 46 (9-11) (2006)
Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, S. Kuboyama, S. Matsuda, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. Microelectron. Reliab. 45 (9-11) (2005)
Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, Abdelkarim Mercha, Eddy Simoen, Cor Claeys, Joan Marc Rafí, Michael Kokkoris
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. Microelectron. Reliab. 44 (9-11) (2004)
M. Da Rold, Eddy Simoen, Sofie Mertens, Marc Schaekers, G. Badenes, Stefaan Decoutere
Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS. Microelectron. Reliab. 41 (12) (2001)
M. Nakabayashi, Hidenori Ohyama, Eddy Simoen, M. Ikegami, Cor Claeys, K. Kobayashi, M. Yoneoka, K. Miyahara
Reliability of polycrystalline silicon thin film resistors. Microelectron. Reliab. 41 (9-10) (2001)
Hidenori Ohyama, Eddy Simoen, S. Kuroda, Cor Claeys, Y. Takami, T. Hakata, K. Kobayashi, M. Nakabayashi, Hiromi Sunaga
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle. Microelectron. Reliab. 41 (1) (2001)
Hidenori Ohyama, M. Nakabayashi, Eddy Simoen, Cor Claeys, T. Tanaka, T. Hirao, S. Onada, K. Kobayashi
Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation. Microelectron. Reliab. 41 (9-10) (2001)