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Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation.

Kiyoteru HayamaKenichiro TakakuraHidenori OhyamaAbdelkarim MerchaEddy SimoenCor ClaeysJoan Marc RafíMichael Kokkoris
Published in: Microelectron. Reliab. (2004)
Keyphrases
  • leakage current
  • low voltage
  • power line
  • design considerations
  • fuel cell
  • cmos technology
  • electrical properties
  • power management
  • real time
  • high speed
  • data sets
  • neural network
  • monte carlo simulation
  • silicon dioxide