Denis Flandre

ORCID

Publication Activity (10 Years)

Years Active: 1996-2024
Publications (10 Years): 64

Top Venues

ESSDERC

IEEE SENSORS

IEEE J. Solid State Circuits

Sensors

Publications

Léopold Van Brandt, Denis Flandre, Jean-Charles Delvenne
Stochastic Nonlinear Dynamical Modelling of SRAM Bitcells in Retention Mode. CoRR (2024)
Léopold Van Brandt, Jean-Charles Delvenne, Denis Flandre
Variability-Aware Noise-Induced Dynamic Instability of Ultra-Low-Voltage SRAM Bitcells. CoRR (2024)
Martin Lefebvre, Denis Flandre, David Bol
A 1.1- / 0.9-nA Temperature-Independent 213- / 565-ppm/$^\circ$C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI. CoRR (2023)
Pengcheng Xu, Denis Flandre, David Bol
Analysis and Design of RF Energy-Harvesting Systems With Impedance-Aware Rectifier Sizing. IEEE Trans. Circuits Syst. II Express Briefs 70 (2) (2023)
Jonathan Parion, Romain Scaffidi, Denis Flandre, Guy Brammertz, Bart Vermang
Low-temperature admittance spectroscopy for defect characterization in Cu(In,Ga)(S,Se)2 thin-film solar cells. EUROCON (2023)
Aryan Afzalian, Denis Flandre
Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection. Sensors 23 (12) (2023)
Tom Klauner, Iman Sabri Alirezaei, Nicolas Roisin, Nicolas André, Denis Flandre
SPICE Model of SPAD Transient Intrinsic Response Validated using Mixed-Mode TCAD Simulations. ESSDERC (2023)
Noémie Bidoul, Teodor Rosca, Adrian M. Ionescu, Denis Flandre
Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron. ESSDERC (2023)
Sana Chouaibi, Mohamed Hadj Said, Dorra Nasr, Mossaad Ben Ayed, Denis Flandre, Fares Tounsi
Mutual Inductance Evaluation Between Two Parallel Conductors on a PCB. ICECS (2023)
Nicolas Roisin, Jean-Pierre Raskin, Denis Flandre
Near-IR response of highly-strained Si photodetector linking first principles and TCAD. ESSDERC (2023)
Sinda Kaziz, Pietro Romano, Antonino Imburgia, Guido Ala, Halim Sghaier, Denis Flandre, Fares Tounsi
PCB-Based Planar Inductive Loops for Partial Discharges Detection in Power Cables. Sensors 23 (1) (2023)
Martin Lefebvre, Denis Flandre, David Bol
A 1.1-/0.9-nA Temperature-Independent 213-/565-ppm/°C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI. IEEE J. Solid State Circuits 58 (8) (2023)
Antonio D. Martínez-Pérez, Francisco Aznar, Denis Flandre, Santiago Celma
Design-Window Methodology for Inductorless Noise-Cancelling CMOS LNAs. IEEE Access 10 (2022)
Léopold Van Brandt, Roghayeh Saeidi, David Bol, Denis Flandre
Accurate and Insightful Closed-Form Prediction of Subthreshold SRAM Hold Failure Rate. IEEE Trans. Circuits Syst. I Regul. Pap. 69 (7) (2022)
Florian Roth, Noémie Bidoul, Teodor Rosca, Meik Dörpinghaus, Denis Flandre, Adrian M. Ionescu, Gerhard P. Fettweis
Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes. JC&S (2022)
Fares Tounsi, Mohamed Hadj Said, Margo Hauwaert, Sinda Kaziz, Laurent A. Francis, Jean-Pierre Raskin, Denis Flandre
Variation Range of Different Inductor Topologies with Shields for RF and Inductive Sensing Applications. Sensors 22 (9) (2022)
Martin Lefebvre, Denis Flandre, David Bol
A 0.9-nA Temperature-Independent 565-ppm/°C Self-Biased Current Reference in 22-nm FDSOI. ESSCIRC (2022)
Maxime Schramme, Léopold Van Brandt, Denis Flandre, David Bol
Comprehensive Analytical Comparison of Ring Oscillators in FDSOI Technology: Current Starving Versus Back-Bias Control. IEEE Trans. Circuits Syst. I Regul. Pap. 69 (5) (2022)
Pengcheng Xu, Denis Flandre, David Bol
A Self-Gating RF Energy Harvester for Wireless Power Transfer With High-PAPR Incident Waveform. IEEE J. Solid State Circuits 56 (6) (2021)
David Bol, Maxime Schramme, Ludovic Moreau, Pengcheng Xu, Rémi Dekimpe, Roghayeh Saeidi, Thomas Haine, Charlotte Frenkel, Denis Flandre
SleepRunner: A 28-nm FDSOI ULP Cortex-M0 MCU With ULL SRAM and UFBR PVT Compensation for 2.6-3.6-μW/DMIPS 40-80-MHz Active Mode and 131-nW/kB Fully Retentive Deep-Sleep Mode. IEEE J. Solid State Circuits 56 (7) (2021)
Thibault P. Delhaye, Nicolas Roisin, Nicolas André, Laurent A. Francis, Denis Flandre
Improving MOSFET Piezoresistive Strain Gauges Limit of Detection Using Lock-In Principle. IEEE SENSORS (2021)
Elise Saoutieff, Tiziana Polichetti, Laurent Jouanet, Adrien Faucon, Audrey Vidal, Alexandre Pereira, Sebastien Boisseau, Thomas Ernst, Maria Lucia Miglietta, Brigida Alfano, Ettore Massera, Saverio De Vito, Do Hanh Ngan Bui, Philippe Benech, Tan-Phu Vuong, Carmen Moldovan, Yann Danlee, Thomas Walewyns, Sylvain Petre, Denis Flandre, Armands Ancans, Modris Greitans, Adrian M. Ionescu
A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project. Sensors 21 (5) (2021)
Wei Peng, Nicolas André, Xi Zeng, Iman Sabri Alirezaei, Guoli Li, Mohamed Bouterfa, Laurent A. Francis, Denis Flandre
Micrometer-thin SOI Sensors for E-Skin Applications. IEEE SENSORS (2020)
Fares Tounsi, Denis Flandre, Libor Rufer, Laurent A. Francis
Performances Evaluation of On-Chip Large-Size-Tapped Transformer for MEMS Applications. IEEE Trans. Instrum. Meas. 69 (9) (2020)
Dina Kamel, François-Xavier Standaert, Alexandre Duc, Denis Flandre, Francesco Berti
Learning with Physical Noise or Errors. IEEE Trans. Dependable Secur. Comput. 17 (5) (2020)
Serguei Stoukatch, Nicolas André, Thibault Delhaye, François Dupont, Jean-Michel Redouté, Denis Flandre
Anisotropic conductive film & flip-chip bonding for low-cost sensor prototyping on rigid & flex PCB. IEEE SENSORS (2020)
Rafael Puyol, Yannick Molle, Sylvain Pétré, Thomas Walewyns, Laurent A. Francis, Denis Flandre
A Practical Approach for the Evaluation of Noise in Oscillator-Based Resistive Sensor Interfaces. IEEE SENSORS (2020)
Pengcheng Xu, Denis Flandre, David Bol
Analysis, Modeling, and Design of a 2.45-GHz RF Energy Harvester for SWIPT IoT Smart Sensors. IEEE J. Solid State Circuits 54 (10) (2019)
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Michel Haond, Denis Flandre, Jean-Pierre Raskin, Valeriya Kilchytska
Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures. ESSDERC (2019)
Remi Dekimpe, Pengcheng Xu, Maxime Schramme, Pierre Gérard, Denis Flandre, David Bol
A battery-less BLE smart sensor for room occupancy tracking supplied by 2.45-GHz wireless power transfer. Integr. 67 (2019)
Sylvain Pétré, Thomas Walewyns, Roussin Lontio Fomekong, Driss Lahem, Marc Debliquy, Denis Flandre, Laurent A. Francis
Live Demonstration: A Highly Selective Temperature and Humidity Compensated MOX Based Multi-Gas Sensor Module with Bluetooth 5.0 Connectivity. IEEE SENSORS (2019)
Kashif Nawaz, Léopold Van Brandt, Itamar Levi, François-Xavier Standaert, Denis Flandre
A security oriented transient-noise simulation methodology: Evaluation of intrinsic physical noise of cryptographic designs. Integr. 68 (2019)
Antonio D. Martínez-Pérez, Cecilia Gimeno, Denis Flandre, Francisco Aznar, Guillermo Royo, Carlos Sánchez-Azqueta
Methodology for Performance Optimization in Noise- and Distortion-Canceling LNA. SMACD (2019)
David Bol, Maxime Schramme, Ludovic Moreau, Thomas Haine, Pengcheng Xu, Charlotte Frenkel, Remi Dekimpe, François Stas, Denis Flandre
A 40-to-80MHz Sub-4μW/MHz ULV Cortex-M0 MCU SoC in 28nm FDSOI With Dual-Loop Adaptive Back-Bias Generator for 20μs Wake-Up From Deep Fully Retentive Sleep Mode. ISSCC (2019)
Javier Aguirre, David Bol, Denis Flandre, Carlos Sánchez-Azqueta, Santiago Celma
A Robust 10-Gb/s Duobinary Transceiver in 0.13-μm SOI CMOS for Short-Haul Optical Networks. IEEE Trans. Ind. Electron. 65 (2) (2018)
Cecilia Gimeno, David Bol, Denis Flandre
Multilevel Half-Rate Phase Detector for Clock and Data Recovery Circuits. IEEE Trans. Very Large Scale Integr. Syst. 26 (9) (2018)
Remi Dekimpe, Pengcheng Xu, Maxime Schramme, Denis Flandre, David Bol
A Battery-Less BLE IoT Motion Detector Supplied by 2.45-GHz Wireless Power Transfer. PATMOS (2018)
Pengcheng Xu, Denis Flandre, David Bol
Design of a 2.45-GHz RF Energy Harvester for SWIPT IoT smart sensors. A-SSCC (2018)
Cecilia Gimeno, Denis Flandre, David Bol
Low-power half-rate dual-loop clock-recovery system in 28-nm FDSOI. LASCAS (2018)
Kashif Nawaz, Léopold Van Brandt, François-Xavier Standaert, Denis Flandre
Let's make it Noisy: A Simulation Methodology for adding Intrinsic Physical Noise to Cryptographic Designs. PRIME (2018)
Kashif Nawaz, Itamar Levi, François-Xavier Standaert, Denis Flandre
A Transient Noise Analysis of Secured Dual-Rail Based Logic Style. NGCAS (2018)
Thomas Haine, Johan Segers, Denis Flandre, David Bol
Gradient importance sampling: An efficient statistical extraction methodology of high-sigma SRAM dynamic characteristics. DATE (2018)
Dina Kamel, Davide Bellizia, François-Xavier Standaert, Denis Flandre, David Bol
Demonstrating an LPPN Processor. ASHES@CCS (2018)
Cecilia Gimeno, Denis Flandre, David Bol
Analysis and Specification of an IR-UWB Transceiver for High-Speed Chip-to-Chip Communication in a Server Chassis. IEEE Trans. Circuits Syst. I Regul. Pap. (6) (2018)
Thibault P. Delhaye, N. Andre, S. Gilet, Cecilia Gimeno, Laurent A. Francis, Denis Flandre
High-efficiency wireless power transfer for mm-size biomedical implants. IEEE SENSORS (2017)
B. Kazemi Esfeh, Valeria Kilchytska, Bertrand Parvais, Nicolas Planes, M. Haond, Denis Flandre, Jean-Pierre Raskin
Back-gate bias effect on UTBB-FDSOI non-linearity performance. ESSDERC (2017)
Guoli Li, Nicolas André, Pierre Gérard, Syed Zeeshan Ali, Florin Udrea, Laurent A. Francis, Yun Zeng, Denis Flandre
Multiple-Wavelength Detection in SOI Lateral PIN Diodes With Backside Reflectors. IEEE Trans. Ind. Electron. 64 (9) (2017)
K. Ben Ali, P. M. Gammon, C. W. Chan, F. Li, V. Pathirana, T. Trajkovic, Farzan Gity, Denis Flandre, Valeria Kilchytska
Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications. ESSDERC (2017)
Thomas Haine, Quoc-Khoi Nguyen, François Stas, Ludovic Moreau, Denis Flandre, David Bol
An 80-MHz 0.4V ULV SRAM macro in 28nm FDSOI achieving 28-fJ/bit access energy with a ULP bitcell and on-chip adaptive back bias generation. ESSCIRC (2017)
Kashif Nawaz, Dina Kamel, François-Xavier Standaert, Denis Flandre
Scaling Trends for Dual-Rail Logic Styles Against Side-Channel Attacks: A Case-Study. COSADE (2017)
Numa Couniot, Laurent A. Francis, Denis Flandre
A 16×16 CMOS Capacitive Biosensor Array Towards Detection of Single Bacterial Cell. IEEE Trans. Biomed. Circuits Syst. 10 (2) (2016)
Pierre-Antoine Haddad, Jean-Pierre Raskin, Denis Flandre
Automated design of a 13.56 MHz corner-robust efficient differential drive rectifier for 10 μA load. ISCAS (2016)
Rafael Assalti, Lígia Martins d'Oliveira, Marcelo Antonio Pavanello, Denis Flandre, Michelly de Souza
Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors. IET Circuits Devices Syst. 10 (4) (2016)
Pierre-Antoine Haddad, Geoffroy Gosset, Jean-Pierre Raskin, Denis Flandre
Automated Design of a 13.56 MHz 19µW Passive Rectifier With 72% Efficiency Under 10µA load. IEEE J. Solid State Circuits 51 (5) (2016)
Pierre-Antoine Haddad, Jean-Pierre Raskin, Denis Flandre
Efficient passive energy harvesters at 950 MHz and 2.45 GHz for 100 μW applications in 65 nm CMOS. ICECS (2016)
Dina Kamel, Guerric de Streel, Santos Merino Del Pozo, Kashif Nawaz, François-Xavier Standaert, Denis Flandre, David Bol
Towards Securing Low-Power Digital Circuits with Ultra-Low-Voltage Vdd Randomizers. SPACE (2016)
Thomas Haine, François Stas, Guerric de Streel, Cecilia Gimeno, Denis Flandre, David Bol
CAMEL: An Ultra-Low-Power VGA CMOS Imager based on a Time-Based DPS Array. ICDSC (2016)
Nicolas André, Guoli Li, Pierre Gérard, Olivier Poncelet, Yun Zeng, Syed Zeeshan Ali, Florin Udrea, Laurent A. Francis, Denis Flandre
Wide band study of silicon-on-insulator photodiodes on suspended micro-hotplates platforms. ICICDT (2015)
Mohamad Al Kadi Jazairli, Denis Flandre
A 65 nm CMOS Ultra-Low-Power Impulse Radio-Ultra-Wideband Emitter for Short-Range Indoor Localization. J. Low Power Electron. 11 (3) (2015)
Numa Couniot, David Bol, Olivier Poncelet, Laurent A. Francis, Denis Flandre
A Capacitance-to-Frequency Converter With On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers Up to 575 MHz. IEEE Trans. Circuits Syst. II Express Briefs (2) (2015)
Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck, Christian Renaux, Denis Flandre
Diamond layout style impact on SOI MOSFET in high temperature environment. Microelectron. Reliab. 55 (5) (2015)
Ahmed T. Elthakeb, Thomas Haine, Denis Flandre, Yehea Ismail, Hamdy Abd Elhamid, David Bol
Analysis and optimization for dynamic read stability in 28nm SRAM bitcells. ISCAS (2015)
Numa Couniot, Guerric de Streel, François Botman, Angelo Kuti Lusala, Denis Flandre, David Bol
A 65 nm 0.5 V DPS CMOS Image Sensor With 17 pJ/Frame.Pixel and 42 dB Dynamic Range for Ultra-Low-Power SoCs. IEEE J. Solid State Circuits 50 (10) (2015)
David Bol, El Hafed Boufouss, Denis Flandre, Julien De Vos
5μW-10mW indoor/outdoor PV energy-harvesting management unit in a 65nm SoC based on a single bidirectional multi-gain/multi-mode switched-cap converter with supercap storage. ESSCIRC (2015)
Sergej Makovejev, B. Kazemi Esfeh, Jean-Pierre Raskin, Valeria Kilchytska, Denis Flandre, V. Barral, Nicolas Planes, M. Haond
Variability of UTBB MOSFET analog figures of merit in wide frequency range. ESSDERC (2014)
Julien De Vos, Denis Flandre, David Bol
A Sizing Methodology for On-Chip Switched-Capacitor DC/DC Converters. IEEE Trans. Circuits Syst. I Regul. Pap. (5) (2014)
Dina Kamel, Mathieu Renauld, Denis Flandre, François-Xavier Standaert
Understanding the limitations and improving the relevance of SPICE simulations in side-channel security evaluations. J. Cryptogr. Eng. 4 (3) (2014)
Sylvain Druart, Denis Flandre, Laurent A. Francis
A Self-Oscillating System to Measure the Conductivity and the Permittivity of Liquids within a Single Triangular Signal. J. Sensors 2014 (2014)
Mohamed Bouterfa, Khaled Aouadi, Denis Flandre, Eduardo Cortina Gil
Characterization of ultra-thin silicon strip detectors for hadrontherapy beam monitoring. I2MTC (2013)
David Bol, Julien De Vos, Cédric Hocquet, François Botman, François Durvaux, Sarah Boyd, Denis Flandre, Jean-Didier Legat
7-µW/MHz Microcontroller in 65-nm LP/GP CMOS for Low-Carbon Wireless Sensor Nodes. IEEE J. Solid State Circuits 48 (1) (2013)
El Hafed Boufouss, Laurent A. Francis, Valeria Kilchytska, Pierre Gérard, Pascal Simon, Denis Flandre
Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference. Sensors 13 (12) (2013)
Michelly de Souza, Bruna Cardoso Paz, Denis Flandre, Marcelo Antonio Pavanello
Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs. Microelectron. Reliab. 53 (6) (2013)
Mohamed Bouterfa, Denis Flandre
Validation of a Novel ultra-thin silicon Strip Detector for Hadron Therapy beam Monitoring. J. Circuits Syst. Comput. 22 (9) (2013)
Sergej Makovejev, Babak Kazemi Esfeh, Jean-Pierre Raskin, Denis Flandre, Valeria Kilchytska, François Andrieu
Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets. ESSDERC (2013)
Valeria Kilchytska, Denis Flandre, François Andrieu
On the UTBB SOI MOSFET performance improvement in quasi-double-gate regime. ESSDERC (2012)
Pierre-Antoine Haddad, Geoffroy Gosset, Denis Flandre
Design of an Ultra-Low-Power Multi-Stage AC/DC Voltage Rectifier and Multiplier Using a Fully-Automated and Portable Design Methodology. J. Low Power Electron. 8 (2) (2012)
David Bol, Julien De Vos, Cédric Hocquet, François Botman, François Durvaux, Sarah Boyd, Denis Flandre, Jean-Didier Legat
A 25MHz 7μW/MHz ultra-low-voltage microcontroller SoC in 65nm LP/GP CMOS for low-carbon wireless sensor nodes. ISSCC (2012)
Julien De Vos, Denis Flandre, David Bol
Pushing Adaptive Voltage Scaling Fully on Chip. J. Low Power Electron. 8 (1) (2012)
Valeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, Otilia Militaru, Guy Berger, Denis Flandre
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. Microelectron. Reliab. 52 (1) (2012)
Mathieu Renauld, Dina Kamel, François-Xavier Standaert, Denis Flandre
Information Theoretic and Security Analysis of a 65-Nanometer DDSLL AES S-Box. CHES (2011)
Geoffroy Gosset, Denis Flandre
Fully-Automated and Portable Design Methodology for Optimal Sizing of Energy-Efficient CMOS Voltage Rectifiers. IEEE J. Emerg. Sel. Topics Circuits Syst. 1 (2) (2011)
Mathieu Renauld, François-Xavier Standaert, Nicolas Veyrat-Charvillon, Dina Kamel, Denis Flandre
A Formal Study of Power Variability Issues and Side-Channel Attacks for Nanoscale Devices. EUROCRYPT (2011)
C. Roda Neve, Valeria Kilchytska, Joaquín Alvarado, Dimitri Lederer, O. Militaru, Denis Flandre, Jean-Pierre Raskin
Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer. Microelectron. Reliab. 51 (2) (2011)
Joaquín Alvarado, Valeria Kilchytska, El Hafed Boufouss, Denis Flandre
Characterization and modelling of single event transients in LDMOS-SOI FETs. Microelectron. Reliab. 51 (9-11) (2011)
Cédric Hocquet, Dina Kamel, Francesco Regazzoni, Jean-Didier Legat, Denis Flandre, David Bol, François-Xavier Standaert
Harvesting the potential of nano-CMOS for lightweight cryptography: an ultra-low-voltage 65 nm AES coprocessor for passive RFID tags. J. Cryptogr. Eng. 1 (1) (2011)
Joaquín Alvarado, El Hafed Boufouss, Valeria Kilchytska, Denis Flandre
Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs. Microelectron. Reliab. 50 (9-11) (2010)
David Bol, Cédric Hocquet, Denis Flandre, Jean-Didier Legat
Robustness-aware sleep transistor engineering for power-gated nanometer subthreshold circuits. ISCAS (2010)
David Bol, Denis Flandre, Jean-Didier Legat
Nanometer MOSFET Effects on the Minimum-Energy Point of Sub-45nm Subthreshold Logic - Mitigation at Technology and Circuit Levels. ACM Trans. Design Autom. Electr. Syst. 16 (1) (2010)
Ilham Hassoune, Denis Flandre, Ian O'Connor, Jean-Didier Legat
ULPFA: A New Efficient Design of a Power-Aware Full Adder. IEEE Trans. Circuits Syst. I Regul. Pap. (8) (2010)
David Bol, Cédric Hocquet, Denis Flandre, Jean-Didier Legat
The detrimental impact of negative Celsius temperature on ultra-low-voltage CMOS logic. ESSCIRC (2010)
Dina Kamel, Cédric Hocquet, François-Xavier Standaert, Denis Flandre, David Bol
Glitch-induced within-die variations of dynamic energy in voltage-scaled nano-CMOS circuits. ESSCIRC (2010)
David Bol, Renaud Ambroise, Denis Flandre, Jean-Didier Legat
Interests and Limitations of Technology Scaling for Subthreshold Logic. IEEE Trans. Very Large Scale Integr. Syst. 17 (10) (2009)
David Bol, Dina Kamel, Denis Flandre, Jean-Didier Legat
Nanometer MOSFET effects on the minimum-energy point of 45nm subthreshold logic. ISLPED (2009)
Dina Kamel, François-Xavier Standaert, Denis Flandre
Scaling Trends of the AES S-box Low Power Consumption in 130 and 65 nm CMOS Technology Nodes. ISCAS (2009)
David Bol, Denis Flandre, Jean-Didier Legat
Technology flavor selection and adaptive techniques for timing-constrained 45nm subthreshold circuits. ISLPED (2009)
David Bol, Renaud Ambroise, Denis Flandre, Jean-Didier Legat
Analysis and minimization of practical energy in 45nm subthreshold logic circuits. ICCD (2008)
David Bol, Renaud Ambroise, Denis Flandre, Jean-Didier Legat
Impact of Technology Scaling on Digital Subthreshold Circuits. ISVLSI (2008)
Rodrigo Trevisoli Doria, Antonio Cerdeira, Jean-Pierre Raskin, Denis Flandre, Marcelo Antonio Pavanello
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation. Microelectron. J. 39 (12) (2008)
Ahmed El Oualkadi, Denis Flandre
Systematic HDL Design of a Delta-Sigma Fractional-N Phase-Locked Loop for Wireless Applications. ISVLSI (2008)
Joaquín Alvarado, Antonio Cerdeira, Valeria Kilchytska, Denis Flandre
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs. Microelectron. J. 38 (3) (2007)

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Publication Activity (10 Years)

Top Topics

Top Venues

Denis Flandre