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Martin Lefebvre
ORCID
Publication Activity (10 Years)
Years Active: 2022-2023
Publications (10 Years): 6
Top Topics
Successive Approximation
Nm Technology
Rms Error
Low Voltage
Top Venues
ESSCIRC
IEEE J. Solid State Circuits
CoRR
IEEE Trans. Circuits Syst. I Regul. Pap.
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Publications
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Martin Lefebvre
,
Denis Flandre
,
David Bol
A 1.1- / 0.9-nA Temperature-Independent 213- / 565-ppm/$^\circ$C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI.
CoRR
(2023)
Adrian Kneip
,
Martin Lefebvre
,
Julien Verecken
,
David Bol
CIM-SRAM With Multi-Bit Analog Batch-Normalization.
IEEE J. Solid State Circuits
58 (7) (2023)
Martin Lefebvre
,
Denis Flandre
,
David Bol
A 1.1-/0.9-nA Temperature-Independent 213-/565-ppm/°C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI.
IEEE J. Solid State Circuits
58 (8) (2023)
Martin Lefebvre
,
David Bol
A Family of Current References Based on 2T Voltage References: Demonstration in 0.18-μm With 0.1-nA PTAT and 1.1-μA CWT 38-ppm/°C Designs.
IEEE Trans. Circuits Syst. I Regul. Pap.
69 (8) (2022)
Adrian Kneip
,
Martin Lefebvre
,
Julien Verecken
,
David Bol
A 1-to-4b 16.8-POPS/W 473-TOPS/mm2 6T-based In-Memory Computing SRAM in 22nm FD-SOI with Multi-Bit Analog Batch-Normalization.
ESSCIRC
(2022)
Martin Lefebvre
,
Denis Flandre
,
David Bol
A 0.9-nA Temperature-Independent 565-ppm/°C Self-Biased Current Reference in 22-nm FDSOI.
ESSCIRC
(2022)