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Martin Lefebvre
ORCID
Publication Activity (10 Years)
Years Active: 2022-2024
Publications (10 Years): 9
Top Topics
Low Level Feature Extraction
Low Voltage
Dynamic Random Access Memory
Nm Technology
Top Venues
CoRR
ESSCIRC
IEEE J. Solid State Circuits
IEEE Trans. Circuits Syst. I Regul. Pap.
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Publications
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Martin Lefebvre
,
David Bol
A Mixed-Signal Near-Sensor Convolutional Imager SoC with Charge-Based 4b-Weighted 5-to-84-TOPS/W MAC Operations for Feature Extraction and Region-of-Interest Detection.
CICC
(2024)
Martin Lefebvre
,
David Bol
A 2.5-nA Area-Efficient Temperature-Independent 176-/82-ppm/°C CMOS-Only Current Reference in 0.11-μm Bulk and 22-nm FD-SOI.
CoRR
(2024)
Martin Lefebvre
,
David Bol
A nA-Range Area-Efficient Sub-100-ppm/°C Peaking Current Reference Using Forward Body Biasing in 0.11-μm Bulk and 22-nm FD-SOI.
CoRR
(2024)
Martin Lefebvre
,
Denis Flandre
,
David Bol
A 1.1- / 0.9-nA Temperature-Independent 213- / 565-ppm/$^\circ$C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI.
CoRR
(2023)
Adrian Kneip
,
Martin Lefebvre
,
Julien Verecken
,
David Bol
CIM-SRAM With Multi-Bit Analog Batch-Normalization.
IEEE J. Solid State Circuits
58 (7) (2023)
Martin Lefebvre
,
Denis Flandre
,
David Bol
A 1.1-/0.9-nA Temperature-Independent 213-/565-ppm/°C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI.
IEEE J. Solid State Circuits
58 (8) (2023)
Martin Lefebvre
,
David Bol
A Family of Current References Based on 2T Voltage References: Demonstration in 0.18-μm With 0.1-nA PTAT and 1.1-μA CWT 38-ppm/°C Designs.
IEEE Trans. Circuits Syst. I Regul. Pap.
69 (8) (2022)
Adrian Kneip
,
Martin Lefebvre
,
Julien Verecken
,
David Bol
A 1-to-4b 16.8-POPS/W 473-TOPS/mm2 6T-based In-Memory Computing SRAM in 22nm FD-SOI with Multi-Bit Analog Batch-Normalization.
ESSCIRC
(2022)
Martin Lefebvre
,
Denis Flandre
,
David Bol
A 0.9-nA Temperature-Independent 565-ppm/°C Self-Biased Current Reference in 22-nm FDSOI.
ESSCIRC
(2022)