Jean-Pierre Raskin

Publication Activity (10 Years)

Years Active: 1998-2024
Publications (10 Years): 24

Top Topics

Educational Contexts

Semiconductor Devices

Automated Design

Top Venues

Publications

Srinjoy Mitra, Jean-Pierre Raskin
The Paradox of Industrial Involvement in Engineering Higher Education. CoRR (2024)
Q. Berlingard, M. Moulin, J.-P. Michel, T. Fache, I. Charlet, C. Plantier, Z. Chalupa, Jose Lugo-Alvarez, Jean-Pierre Raskin, Louis Hutin, Mikaël Cassé
RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature. ESSDERC (2023)
Youssef Bendou, Martin Rack, Dimitri Lederer, Andreia Cathelin, Jean-Pierre Raskin
Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI. NEWCAS (2023)
Nicolas Roisin, Jean-Pierre Raskin, Denis Flandre
Near-IR response of highly-strained Si photodetector linking first principles and TCAD. ESSDERC (2023)
Srinjoy Mitra, Jean-Pierre Raskin, Mario Pansera
Role of ICT Innovation in Perpetuating the Myth of Techno-Solutionism. CoRR (2023)
Srinjoy Mitra, Jean-Pierre Raskin
The Paradox of Industrial Involvement in Engineering Higher Education. FIE (2023)
Rameez Raja Shaik, Chandrasekar Lakshumanan, Jean-Pierre Raskin, Kumar Prasannajit Pradhan
Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET. Microelectron. J. 121 (2022)
Fares Tounsi, Mohamed Hadj Said, Margo Hauwaert, Sinda Kaziz, Laurent A. Francis, Jean-Pierre Raskin, Denis Flandre
Variation Range of Different Inductor Topologies with Shields for RF and Inductive Sensing Applications. Sensors 22 (9) (2022)
O. de Leuze, Yann Danlee, X. Tang, J. Mahy, Thomas Walewyns, Jean-Pierre Raskin, S. Hermans, Laurent A. Francis
Sub-ppm detection of H2S with CuO-loaded SnO2 hollow nanospheres deposited on interdigitated electrodes. ISOEN (2022)
Thibault Pirson, Thibault P. Delhaye, Alex Pip, Grégoire Le Brun, Jean-Pierre Raskin, David Bol
The Environmental Footprint of IC Production: Meta-Analysis and Historical Trends. ESSDERC (2022)
Quentin Courte, M. Rack, M. Nabet, Pieter Cardinael, Jean-Pierre Raskin
High-Temperature Characterization of Novel Silicon-Based Substrate Solutions for RF-IC Applications. ESSDERC (2021)
Pieter Cardinael, Sachin Yadav, Ming Zhao, M. Rack, Dimitri Lederer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin
Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates. ESSDERC (2021)
Martin Rack, Lucas Nyssens, Quentin Courte, Dimitri Lederer, Jean-Pierre Raskin
Impact of Device Shunt Loss on DC-80 GHz SPDT in 22 nm FD-SOI. ESSDERC (2021)
Xiaohui Tang, Marc Debliquy, Driss Lahem, Yiyi Yan, Jean-Pierre Raskin
A Review on Functionalized Graphene Sensors for Detection of Ammonia. Sensors 21 (4) (2021)
Sachin Yadav, Pieter Cardinael, Ming Zhao, Komal Vondkar, Uthayasankaran Peralagu, AliReza Alian, Ahmad Khaled, Sergej Makovejev, Enrique Ekoga, Dimitri Lederer, Jean-Pierre Raskin, Bertrand Parvais, Nadine Collaert
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. ICICDT (2021)
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Michel Haond, Denis Flandre, Jean-Pierre Raskin, Valeriya Kilchytska
Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures. ESSDERC (2019)
Marc Debliquy, Driss Lahem, Antonio Bueno-Martinez, Christophe Caucheteur, Marcel Bouvet, Isaline Recloux, Jean-Pierre Raskin, Marie-Georges Olivier
Sensor Based on Lutetium Bisphthalocyanine in a Mesoporous Silica Matrix. Sensors 18 (3) (2018)
Luis A. Velosa-Moncada, Luz Antonio Aguilera-Cortés, Max A. González-Palacios, Jean-Pierre Raskin, Agustín Leobardo Herrera-May
Design of a Novel MEMS Microgripper with Rotatory Electrostatic Comb-Drive Actuators for Biomedical Applications. Sensors 18 (5) (2018)
Néstor N. Peña-García, Luz Antonio Aguilera-Cortés, Max A. González-Palacios, Jean-Pierre Raskin, Agustín Leobardo Herrera-May
Design and Modeling of a MEMS Dual-Backplate Capacitive Microphone with Spring-Supported Diaphragm for Mobile Device Applications. Sensors 18 (10) (2018)
B. Kazemi Esfeh, Valeria Kilchytska, Bertrand Parvais, Nicolas Planes, M. Haond, Denis Flandre, Jean-Pierre Raskin
Back-gate bias effect on UTBB-FDSOI non-linearity performance. ESSDERC (2017)
Xiaohui Tang, Jean-Pierre Raskin, Driss Lahem, Arnaud Krumpmann, André Decroly, Marc Debliquy
Nanotube Array. Sensors 17 (4) (2017)
Pierre-Antoine Haddad, Jean-Pierre Raskin, Denis Flandre
Automated design of a 13.56 MHz corner-robust efficient differential drive rectifier for 10 μA load. ISCAS (2016)
Pierre-Antoine Haddad, Geoffroy Gosset, Jean-Pierre Raskin, Denis Flandre
Automated Design of a 13.56 MHz 19µW Passive Rectifier With 72% Efficiency Under 10µA load. IEEE J. Solid State Circuits 51 (5) (2016)
Pierre-Antoine Haddad, Jean-Pierre Raskin, Denis Flandre
Efficient passive energy harvesters at 950 MHz and 2.45 GHz for 100 μW applications in 65 nm CMOS. ICECS (2016)
A. Rouhi Najaf Abadi, W. Guo, X. Sun, K. Ben Ali, Jean-Pierre Raskin, M. Rack, C. Roda Neve, M. Choi, V. Moroz, Geert Van der Plas, Ingrid De Wolf, Eric Beyne, Philippe P. Absil
Through silicon via to FinFET noise coupling in 3-D integrated circuits. ICICDT (2015)
Jean-Pierre Raskin
FinFET versus UTBB SOI - A RF perspective. ESSDERC (2015)
Jean-Marc Le Meil, Bernard Aspar, Eric Desbonnets, Jean-Pierre Raskin
Engineered substrates: The foundation to meet current and future RF requirements. VLSI-DAT (2015)
Sergej Makovejev, B. Kazemi Esfeh, Jean-Pierre Raskin, Valeria Kilchytska, Denis Flandre, V. Barral, Nicolas Planes, M. Haond
Variability of UTBB MOSFET analog figures of merit in wide frequency range. ESSDERC (2014)
Yasmina Belaroussi, Abdelhalim Slimane, Mohand-Tahar Belaroussi, Mohamed Trabelsi, Gilles Scheen, Khaled Ben Ali, Jean-Pierre Raskin
RF and non-linearity characterization of porous silicon layer for RF-ICs. IDT (2014)
Jean-Pierre Raskin
SOI technology: An opportunity for RF designers? VLSI-DAT (2014)
Sergej Makovejev, Babak Kazemi Esfeh, Jean-Pierre Raskin, Denis Flandre, Valeria Kilchytska, François Andrieu
Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets. ESSDERC (2013)
C. Roda Neve, Valeria Kilchytska, Joaquín Alvarado, Dimitri Lederer, O. Militaru, Denis Flandre, Jean-Pierre Raskin
Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer. Microelectron. Reliab. 51 (2) (2011)
Jan Ackaert, R. Charavel, K. Dhondt, B. Vlachakis, Luc De Schepper, M. Millecam, E. Vandevelde, P. Bogaert, A. Iline, Eddy De Backer, Alexandru Vlad, Jean-Pierre Raskin
MIMC reliability and electrical behavior defined by a physical layer property of the dielectric. Microelectron. Reliab. 48 (8-9) (2008)
Rodrigo Trevisoli Doria, Antonio Cerdeira, Jean-Pierre Raskin, Denis Flandre, Marcelo Antonio Pavanello
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation. Microelectron. J. 39 (12) (2008)
M. El Ghorba, Nicolas André, S. Sobieski, Jean-Pierre Raskin
Out-of-Plane Cmos Compatible Magnetometers CoRR (2008)
Carlos Méndez, Christophe Louis, S. Paquay, P. De Vincenzo, Igor Klapka, Véronique Rochus, F. Iker, Nicolas André, Jean-Pierre Raskin
3-D Self-Assembled Soi Mems: An Example of Multiphysics Simulation CoRR (2007)
D. Fabrègue, Nicolas André, T. Pardoen, Jean-Pierre Raskin
New Internal Stress Driven on-Chip Micromachines for Extracting Mechanical Properties of Thin Films CoRR (2007)
G. Laurent, Luis Moreno Hagelsieb, Dimitri Lederer, P. E. Lobert, Denis Flandre, J. Remacle, Jean-Pierre Raskin
DNA electrical detection based on inductor resonance frequency in standard CMOS technology. ESSCIRC (2003)
Jean-Paul Eggermont, Denis Flandre, Jean-Pierre Raskin, Jean-Pierre Colinge
Potential and modeling of 1-μm SOI CMOS operational transconductance amplifiers for applications up to 1 GHz. IEEE J. Solid State Circuits 33 (4) (1998)