Mikaël Cassé

Publication Activity (10 Years)

Years Active: 2009-2023
Publications (10 Years): 13

Top Topics

Quantum Computing

Top Venues

VLSI Technology and Circuits

Microelectron. Reliab.

Publications

Q. Berlingard, M. Moulin, J.-P. Michel, T. Fache, I. Charlet, C. Plantier, Z. Chalupa, Jose Lugo-Alvarez, Jean-Pierre Raskin, Louis Hutin, Mikaël Cassé
RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature. ESSDERC (2023)
G. Elbaz, Mikaël Cassé, V. Labracherie, G. Roussely, Benoit Bertrand, Heimanu Niebojewski, Maud Vinet, F. Balestro, Matias Urdampilleta, Tristan Meunier, Bruna Cardoso Paz
Si for spin qubit applications. ESSDERC (2023)
Lauriane Contamin, Mikaël Cassé, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, André Juge, Emmanuel Vincent, Silvano De Franceschi, Tristan Meunier
Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K. IRPS (2022)
Heimanu Niebojewski, Benoit Bertrand, E. Nowak, Thomas Bedecarrats, Bruna Cardoso Paz, Lauriane Contamin, Pierre-André Mortemousque, V. Labracherie, L. Brevard, H. Sahin, Jean Charbonnier, C. Thomas, Myriam Assous, Mikaël Cassé, Matias Urdampilleta, Yann-Michel Niquet, François Perruchot, Fred Gaillard, Silvano De Franceschi, Tristan Meunier, Maud Vinet
Specificities of linear Si QD arrays integration and characterization. VLSI Technology and Circuits (2022)
Tadeu Mota Frutuoso, Xavier Garros, Perrine Batude, Laurent Brunet, Joris Lacord, B. Sklenard, V. Lapras, Claire Fenouillet-Béranger, M. Ribotta, A. Magalhaes-Lucas, J. Kanyandekwe, R. Kies, G. Romano, Edoardo Catapano, Mikaël Cassé, Jose Lugo-Alvarez, P. Ferrari, Fred Gaillard
Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration. VLSI Technology and Circuits (2022)
Michelly de Souza, Sylvain Barraud, Mikaël Cassé, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello
Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors. ESSDERC (2021)
Tadeu Mota Frutuoso, Jose Lugo-Alvarez, Xavier Garros, Laurent Brunet, Joris Lacord, Louis Gerrer, Mikaël Cassé, Edoardo Catapano, Claire Fenouillet-Béranger, François Andrieu, Fred Gaillard, Philippe Ferrari
Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration. IRPS (2021)
Louis Hutin, B. Bertrand, H. Niebojewski, P.-A. Mortemousque, Mikaël Cassé, Gérard Billiot, Xavier Jehl, Romain Maurand, Matias Urdampilleta, Yann-Michel Niquet, S. De Franceschi, T. Meunier, Maud Vinet
MOS technology for quantum computing: recent progress and perspectives for scaling up. DRC (2021)
Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS (2018)
Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, L. Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo
Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. ESSDERC (2017)
Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello
Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. Microelectron. Reliab. 79 (2017)
Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot
Analog performance of strained SOI nanowires down to 10K. ESSDERC (2016)
Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello
Drain current model for short-channel triple gate junctionless nanowire transistors. Microelectron. Reliab. 63 (2016)
J. Pelloux-Prayer, Mikaël Cassé, Francois Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. ESSDERC (2015)
Claire Fenouillet-Béranger, Bernard Previtali, Perrine Batude, F. Nemouchi, Mikaël Cassé, Xavier Garros, L. Tosti, Nils Rambal, Dominique Lafond, H. Dansas, L. Pasini, Laurent Brunet, Fabien Deprat, M. Gregoire, M. Mellier, Maud Vinet
FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration. ESSDERC (2014)
François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, B. De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, V. Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, M. Haond
Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. ESSDERC (2014)
Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo
Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. ESSDERC (2013)
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC (2013)
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. ESSDERC (2012)
Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, F. Martin, Claudia Wiemer, F. Boulanger
Process dependence of BTI reliability in advanced HK MG stacks. Microelectron. Reliab. 49 (9-11) (2009)