Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model.
J. Pelloux-PrayerMikaël CasséFrancois TriozonSylvain BarraudYann-Michel NiquetJ.-L. RouviereOlivier FaynotGilles ReimboldPublished in: ESSDERC (2015)