Gilles Reimbold

Publication Activity (10 Years)

Years Active: 2001-2018
Publications (10 Years): 6

Top Topics

Cmos Technology

Theoretical Analysis

Power Consumption

Top Venues

Microelectron. Reliab.

Publications

Xavier Garros, Alexandre Subirats, Gilles Reimbold, F. Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik
A new method for quickly evaluating reversible and permanent components of the BTI degradation. IRPS (2018)
Xavier Garros, Antoine Laurent, Alexandre Subirats, X. Federspiel, E. Vincent, Gilles Reimbold
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors. Microelectron. Reliab. 80 (2018)
William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, Gilles Reimbold
On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. ESSDERC (2017)
Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello
Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. Microelectron. Reliab. 79 (2017)
Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot
Analog performance of strained SOI nanowires down to 10K. ESSDERC (2016)
Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello
Drain current model for short-channel triple gate junctionless nanowire transistors. Microelectron. Reliab. 63 (2016)
G. Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. IRPS (2015)
J. Pelloux-Prayer, Mikaël Cassé, Francois Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. ESSDERC (2015)
Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo
Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectron. Reliab. 55 (9-10) (2015)
Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. ESSDERC (2015)
G. Besnard, Xavier Garros, François Andrieu, P. Nguyen, W. van den Daele, P. Reynaud, Walter Schwarzenbach, D. Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu
Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. ESSDERC (2014)
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC (2013)
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. ESSDERC (2012)
Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, R. Annunziata, Gilles Reimbold, G. Pananakakis, B. De Salvo
Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. ESSDERC (2012)
Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, F. Martin, Claudia Wiemer, F. Boulanger
Process dependence of BTI reliability in advanced HK MG stacks. Microelectron. Reliab. 49 (9-11) (2009)
Charles Leroux, Gérard Ghibaudo, Gilles Reimbold
Accurate determination of flat band voltage in advanced MOS structure. Microelectron. Reliab. 47 (4-5) (2007)
Gilles Reimbold, J. Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, F. Martin
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. Microelectron. Reliab. 47 (4-5) (2007)
Gilles Reimbold, T. Poiroux
Plasma charging damage mechanisms and impact on new technologies. Microelectron. Reliab. 41 (7) (2001)