Marie-Anne Jaud

Publication Activity (10 Years)

Years Active: 2010-2023
Publications (10 Years): 6

Top Topics

Electric Power Systems

Structuring Elements

Reliability Assessment

Top Venues

Publications

William Vandendaele, Camille Leurquin, R. Lavieville, Marie-Anne Jaud, Abygaël Viey, Romain Gwoziecki, B. Mohamad, E. Nowak, A. Constant, Ferdinando Iucolano
Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited). IRPS (2023)
Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS (2021)
B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, Francois Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, C. Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. ESSDERC (2021)
Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS (2019)
William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, A. Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, F. Gaillard
A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. IRPS (2018)
William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, Gilles Reimbold
On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. ESSDERC (2017)
Olivier Thomas, Jean-Philippe Noel, Claire Fenouillet-Béranger, Marie-Anne Jaud, J. Dura, P. Perreau, Frédéric Boeuf, François Andrieu, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Andrei Vladimirescu, Amara Amara
32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit. ISCAS (2010)