François Andrieu

Publication Activity (10 Years)

Years Active: 2009-2024
Publications (10 Years): 33

Top Topics

Reliability Assessment

Top Venues

Publications

Olivier Billoint, Simon Martin, J. Laguerre, L. Hosier, Jean Coignus, Catherine Carabasse, François Andrieu, Laurent Grenouillet
Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations. IMW (2024)
Papavramidou Panagiota, Sebastien Ricavy, Christopher Mounet, Carine Jahan, Niccolo Castellani, François Andrieu
A synergistic fault tolerance framework for Mbit 28nm embedded RRAM. IOLTS (2024)
J. Laguerre, Simon Martin, Jean Coignus, Catherine Carabasse, Marc Bocquet, François Andrieu, Laurent Grenouillet
Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays. IRPS (2024)
J. Laguerre, Marc Bocquet, Olivier Billoint, S. Martin, Jean Coignus, Catherine Carabasse, T. Magis, T. Dewolf, François Andrieu, Laurent Grenouillet
Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes. IMW (2023)
Joel Minguet Lopez, Manon Dampfhoffer, Tifenn Hirtzlin, Lucas Reganaz, Laurent Grenouillet, Gabriele Navarro, Mathieu Bernard, Thomas Magis, Catherine Carabasse, Niccolo Castellani, Valentina Meli, Elisa Vianello, Damien Deleruyelle, Jean-Michel Portal, Gabriel Molas, François Andrieu
1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation. MIXDES (2023)
T. Dubreuil, S. Barraud, J.-M. Pedini, J.-M. Hartmann, F. Boulard, A. Sarrazin, A. Gharbi, Johannes Sturm, A. Lambert, S. Martin, Niccolo Castellani, A. Anotta, A. Magalhaes-Lucas, Aurelie Souhaite, François Andrieu
Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory. ESSDERC (2023)
Fadi Jebali, Atreya Majumdar, Clement Türck, Kamel-Eddine Harabi, Mathieu-Coumba Faye, Eloi Muhr, Jean-Pierre Walder, Oleksandr Bilousov, Amadeo Michaud, Elisa Vianello, Tifenn Hirtzlin, François Andrieu, Marc Bocquet, Stéphane Collin, Damien Querlioz, Jean-Michel Portal
Powering AI at the Edge: A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell. CoRR (2023)
Mona Ezzadeen, Atreya Majumdar, Sigrid Thomas, Jean-Philippe Noël, Bastien Giraud, Marc Bocquet, François Andrieu, Damien Querlioz, Jean-Michel Portal
Binary ReRAM-based BNN first-layer implementation. DATE (2023)
L. Reganaz, Damien Deleruyelle, Quentin Rafhay, Joel Minguet Lopez, Niccolo Castellani, Jean-François Nodin, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, François Andrieu
Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability. IRPS (2023)
Laurent Grenouillet, Justine Barbot, J. Laguerre, Simon Martin, Catherine Carabasse, M. Louro, Messaoud Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, T. Magis, Carine Jahan, François Andrieu, Jean Coignus
Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited). IRPS (2023)
Joel Minguet Lopez, François Rummens, L. Reganaz, A. Heraud, Tifenn Hirtzlin, Laurent Grenouillet, Gabriele Navarro, Mathieu Bernard, Catherine Carabasse, Niccolo Castellani, V. Meli, S. Martin, T. Magis, Elisa Vianello, C. Sabbione, Damien Deleruyelle, Marc Bocquet, Jean-Michel Portal, Gabriel Molas, François Andrieu
1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing. IMW (2022)
C. Laguna, Mathieu Bernard, Julien Garrione, Niccolo Castellani, Valentina Meli, S. Martin, François Aussenac, D. Rouchon, N. Rochat, Emmanuel Nolot, Guillaume Bourgeois, Marie Claire Cyrille, Liviu Militaru, A. Souifi, François Andrieu, Gabriele Navarro
Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement. ESSDERC (2022)
Eduardo Esmanhotto, Tifenn Hirtzlin, Niccolo Castellani, S. Martin, Bastien Giraud, François Andrieu, Jean-Francois Nodin, Damien Querlioz, Jean-Michel Portal, Elisa Vianello
Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations. CoRR (2022)
A. Trabelsi, Carlo Cagli, Tifenn Hirtzlin, Olga Cueto, Marie Claire Cyrille, Elisa Vianello, V. Meli, Veronique Sousa, Guillaume Bourgeois, François Andrieu
Frequency modulation of conductance level in PCM device for neuromorphic applications. ESSCIRC (2022)
Gabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle, Quentin Rafhay, Niccolo Castellani, L. Reganaz, Alain Persico, R. Segaud, Jean-François Nodin, V. Meli, S. Martin, François Andrieu, Laurent Grenouillet
High temperature stability embedded ReRAM for 2x nm node and beyond. IMW (2022)
Eduardo Esmanhotto, Tifenn Hirtzlin, Niccolo Castellani, S. Martin, Bastien Giraud, François Andrieu, Jean-François Nodin, Damien Querlioz, Jean-Michel Portal, Elisa Vianello
Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations. IRPS (2022)
Gabriele Navarro, C. Sabbione, V. Meli, L. E. Nistor, M. Frei, Julien Garrione, M. Tessaire, F. Fillot, Nicolas Bernier, Emmanuel Nolot, Benoit Sklénard, J. Li, S. Martin, Niccolo Castellani, Guillaume Bourgeois, Marie Claire Cyrille, François Andrieu
Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate. IMW (2022)
C. De Camaret, Guillaume Bourgeois, Olga Cueto, Valentina Meli, S. Martin, D. Despois, V. Beugin, Niccolo Castellani, Marie Claire Cyrille, François Andrieu, Julien Arcamone, Y. Le-Friec, Gabriele Navarro
Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction. ESSDERC (2022)
Giusy Lama, Mathieu Bernard, Julien Garrione, Nicolas Bernier, Niccolo Castellani, Guillaume Bourgeois, Marie Claire Cyrille, François Andrieu, Gabriele Navarro
TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory. ESSDERC (2022)
T. Dubreuil, P. Amari, S. Barraud, Joris Lacord, Eduardo Esmanhotto, V. Meli, S. Martin, Niccolo Castellani, Bernard Previtali, François Andrieu
A novel 3D 1T1R RRAM architecture for memory-centric Hyperdimensional Computing. IMW (2022)
Filippo Moro, Eduardo Esmanhotto, Tifenn Hirtzlin, Niccolo Castellani, A. Trabelsi, Thomas Dalgaty, Gabriel Molas, François Andrieu, Stefano Brivio, Sabina Spiga, Giacomo Indiveri, Melika Payvand, Elisa Vianello
Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks. ISCAS (2022)
Justine Barbot, Jean Coignus, Nicolas Vaxelaire, Catherine Carabasse, Olivier Glorieux, Messaoud Bedjaoui, François Aussenac, François Andrieu, François Triozon, Laurent Grenouillet
Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements. ESSCIRC (2022)
M. Ezzadeen, Atreya Majumdar, Marc Bocquet, Bastien Giraud, Jean-Philippe Noël, François Andrieu, Damien Querlioz, Jean-Michel Portal
Low-Overhead Implementation of Binarized Neural Networks Employing Robust 2T2R Resistive RAM Bridges. ESSCIRC (2021)
M. Ezzadeen, Atreya Majumdar, Marc Bocquet, Bastien Giraud, Jean-Philippe Noël, François Andrieu, Damien Querlioz, Jean-Michel Portal
Low-Overhead Implementation of Binarized Neural Networks Employing Robust 2T2R Resistive RAM Bridges. ESSDERC (2021)
Tadeu Mota Frutuoso, Jose Lugo-Alvarez, Xavier Garros, Laurent Brunet, Joris Lacord, Louis Gerrer, Mikaël Cassé, Edoardo Catapano, Claire Fenouillet-Béranger, François Andrieu, Fred Gaillard, Philippe Ferrari
Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration. IRPS (2021)
M. Ezzadeen, D. Bosch, Bastien Giraud, S. Barraud, Jean-Philippe Noël, Didier Lattard, Joris Lacord, Jean-Michel Portal, François Andrieu
Ultra-High-density 3D vertical RRAM with stacked JunctionLess nanowires for In-Memory-Computing applications. CoRR (2020)
François Andrieu, Perrine Batude, Laurent Brunet, Claire Fenouillet-Béranger, Didier Lattard, Sébastien Thuries, Olivier Billoint, R. Fournel, Maud Vinet
A review on opportunities brought by 3D-monolithic integration for CMOS device and digital circuit. ICICDT (2018)
Claire Fenouillet-Béranger, S. Beaurepaire, Fabien Deprat, Alexandre Ayres De Sousa, Laurent Brunet, Perrine Batude, Olivier Rozeau, François Andrieu, Paul Besombes, M.-P. Samson, Bernard Previtali, F. Nemouchi, G. Rodriguez, Philippe Rodriguez, R. Famulok, Nils Rambal, V. Balan, Z. Saghi, V. Jousseaume, Charles-Antoine Guérin, F. Ibars, F. Proud, D. Nouguier, David Ney, V. Delaye, H. Dansas, X. Federspiel, Maud Vinet
Guidelines for intermediate back end of line (BEOL) for 3D sequential integration. ESSDERC (2017)
Melanie Brocard, Benoît Mathieu, Jean-Philippe Colonna, Cristiano Santos, Claire Fenouillet-Béranger, Cao-Minh Vincent Lu, Gerald Cibrario, Laurent Brunet, Perrine Batude, François Andrieu, Sébastien Thuries, Olivier Billoint
Transistor Temperature Deviation Analysis in Monolithic 3D Standard Cells. ISVLSI (2017)
Claire Fenouillet-Béranger, Perrine Batude, Laurent Brunet, Vincent Mazzocchi, Cao-Minh Vincent Lu, Fabien Deprat, Jessy Micout, M.-P. Samson, Bernard Previtali, Paul Besombes, Nils Rambal, François Andrieu, Olivier Billoint, Melanie Brocard, Sébastien Thuries, Gerald Cibrario, Maud Vinet
Recent advances in 3D VLSI integration. ICICDT (2016)
R. Berthelon, François Andrieu, P. Perreau, E. Baylac, A. Pofelski, Emmanuel Josse, Didier Dutartre, A. Claverie, Michel Haond
Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration. ESSDERC (2016)
Melanie Brocard, Guillaume Berhault, Sébastien Thuries, Fabien Clermidy, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, François Andrieu, Fabien Deprat, Joris Lacord, Olivier Rozeau, Gerald Cibrario, Olivier Billoint
Impact of intermediate BEOL technology on standard cell performances of 3D VLSI. ESSDERC (2016)
Maud Vinet, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, Vincent Mazzocchi, Cao-Minh Vincent Lu, Fabien Deprat, Jessy Micout, Bernard Previtali, Paul Besombes, Nils Rambal, François Andrieu, Olivier Billoint, Melanie Brocard, Sébastien Thuries, Guillaume Berhault, Cristiano Lopes Dos Santos, Gerald Cibrario, Fabien Clermidy, Daniel Gitlin, Olivier Faynot
Opportunities brought by sequential 3D CoolCube™ integration. ESSDERC (2016)
G. Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. IRPS (2015)
Carlos Navarro, Maryline Bawedin, François Andrieu, Jacques Cluzel, Xavier Garros, Sorin Cristoloveanu
CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodes. ESSDERC (2014)
François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, B. De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, V. Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, M. Haond
Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. ESSDERC (2014)
G. Besnard, Xavier Garros, François Andrieu, P. Nguyen, W. van den Daele, P. Reynaud, Walter Schwarzenbach, D. Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu
Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. ESSDERC (2014)
J. Mazurier, Olivier Weber, François Andrieu, Cyrille Le Royer, Olivier Faynot, Maud Vinet
Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs. ICICDT (2014)
Carlos Navarro, Maryline Bawedin, François Andrieu, Bruno Sagnes, Sorin Cristoloveanu
Why are SCE overestimated in FD-SOI MOSFETs? ESSDERC (2013)
Sergej Makovejev, Babak Kazemi Esfeh, Jean-Pierre Raskin, Denis Flandre, Valeria Kilchytska, François Andrieu
Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets. ESSDERC (2013)
Valeria Kilchytska, Denis Flandre, François Andrieu
On the UTBB SOI MOSFET performance improvement in quasi-double-gate regime. ESSDERC (2012)
J. Mazurier, Olivier Weber, François Andrieu, Alain Toffoli, Olivier Thomas, Fabienne Allain, Jean-Philippe Noel, Marc Belleville, Olivier Faynot, T. Poiroux
Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below. J. Low Power Electron. 8 (1) (2012)
Carlos Navarro, Noel Rodriguez, Luca Donetti, Akiko Oliata, Francisco Gámiz, François Andrieu, Olivier Faynot, Claire Fenouillet-Béranger, Sorin Cristoloveanu
Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET. ESSDERC (2012)
Olivier Thomas, Jean-Philippe Noel, Claire Fenouillet-Béranger, Marie-Anne Jaud, J. Dura, P. Perreau, Frédéric Boeuf, François Andrieu, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Andrei Vladimirescu, Amara Amara
32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit. ISCAS (2010)
Claire Fenouillet-Béranger, P. Perreau, S. Denorme, L. Tosti, François Andrieu, Olivier Weber, S. Barnola, C. Arvet, Y. Campidelli, Sébastien Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, L. Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, A. Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Olivier Faynot, Thomas Skotnicki
Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. ESSCIRC (2009)