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Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability.

L. ReganazDamien DeleruyelleQuentin RafhayJoel Minguet LopezNiccolo CastellaniJean-François NodinAlessandro BricalliGiuseppe PiccolboniGabriel MolasFrançois Andrieu
Published in: IRPS (2023)
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