Jean-François Nodin

Publication Activity (10 Years)

Years Active: 2013-2023
Publications (10 Years): 6

Top Topics

Temporal Consistency

High Temperature

Top Venues

Publications

L. Reganaz, Damien Deleruyelle, Quentin Rafhay, Joel Minguet Lopez, Niccolo Castellani, Jean-François Nodin, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, François Andrieu
Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability. IRPS (2023)
Vivek Parmar, Sandeep Kaur Kingra, Deepak Verma, Digamber Pandey, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Pares, Laurent Grenouillet, Jean-François Nodin, Manan Suri
Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array. IMW (2023)
Henriette Padberg, Amir Regev, Giuseppe Piccolboni, Alessandro Bricalli, Gabriel Molas, Jean-François Nodin, Shahar Kvatinsky
Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors. CoRR (2023)
Gabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle, Quentin Rafhay, Niccolo Castellani, L. Reganaz, Alain Persico, R. Segaud, Jean-François Nodin, V. Meli, S. Martin, François Andrieu, Laurent Grenouillet
High temperature stability embedded ReRAM for 2x nm node and beyond. IMW (2022)
Eduardo Esmanhotto, Tifenn Hirtzlin, Niccolo Castellani, S. Martin, Bastien Giraud, François Andrieu, Jean-François Nodin, Damien Querlioz, Jean-Michel Portal, Elisa Vianello
Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations. IRPS (2022)
Amir Regev, Alessandro Bricalli, Giuseppe Piccolboni, Alexandre Valentian, Thomas Mesquida, Gabriel Molas, Jean-François Nodin
Fully-Integrated Spiking Neural Network Using SiOx-Based RRAM as Synaptic Device. AICAS (2020)
Boubacar Traore, Elisa Vianello, Gabriel Molas, Marc Gely, Jean-François Nodin, Eric Jalaguier, Philippe Blaise, Barbara De Salvo, Leonardo R. C. Fonseca, Kanhao Xue, Yoshio Nishi
On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. ESSDERC (2013)