On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations.
Boubacar TraoreElisa VianelloGabriel MolasMarc GelyJean-François NodinEric JalaguierPhilippe BlaiseBarbara De SalvoLeonardo R. C. FonsecaKanhao XueYoshio NishiPublished in: ESSDERC (2013)