Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below.
Claire Fenouillet-BérangerP. PerreauS. DenormeL. TostiFrançois AndrieuOlivier WeberS. BarnolaC. ArvetY. CampidelliSébastien HaendlerR. BeneytonC. PerrotC. de ButtetP. GrosL. Pham-NguyenF. LeverdP. GouraudF. AbbateF. BaronA. TorresC. LavironL. PinzelliJ. VetierC. BorowiakA. MargainD. DelpratF. BoedtKonstantin BourdelleBich-Yen NguyenOlivier FaynotThomas SkotnickiPublished in: ESSCIRC (2009)