Sébastien Haendler

Publication Activity (10 Years)

Years Active: 2000-2021
Publications (10 Years): 6

Top Topics

Cmos Technology

Reliability Assessment

Software Defect

Top Venues

Microelectron. Reliab.

Publications

Paul Devoge, Hassen Aziza, Philippe Lorenzini, Franck Julien, Abderrezak Marzaki, Alexandre Malherbe, Marc Mantelli, Thomas Sardin, Sébastien Haendler, Arnaud Régnier, Stephan Niel
Circuit-level evaluation of a new zero-cost transistor in an embedded non-volatile memory CMOS technology. DTIS (2021)
Franck Arnaud, Sébastien Haendler, Sylvain Clerc, Rossella Ranica, Anna Gandolfo, Olivier Weber
28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications. ESSDERC (2019)
Franck Arnaud, Sébastien Haendler, Sylvain Clerc, Rossella Ranica, Anna Gandolfo, Olivier Weber
28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications. ESSCIRC (2019)
R. Lajmi, Florian Cacho, O. David, Jean-Pierre Blanc, Emmanuel Rouat, Sébastien Haendler, Ph. Benech, Estelle Lauga-Larroze, Sylvain Bourdel
Reliability assessment of 4GSP/s interleaved SAR ADC. IRPS (2018)
Marcelino Seif, Fabien Pascal, Bruno Sagnes, J. Elbeyrouthy, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria
Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies. ICM (2017)
Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, D. Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, M. Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. VLSI Circuits (2016)
Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo
New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. IRPS (2015)
Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria
Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistors. ESSDERC (2014)
Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria
Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications. Microelectron. Reliab. 54 (9-10) (2014)
Eleftherios G. Ioannidis, Sébastien Haendler, Christoforos G. Theodorou, Nicolas Planes, C. A. Dimitriadis, Gérard Ghibaudo
Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. ESSDERC (2014)
Vivek Asthana, Malathi Kar, Jean Jimenez, Jean-Philippe Noel, Sébastien Haendler, Philippe Galy
Circuit optimization of 4T, 6T, 8T, 10T SRAM bitcells in 28nm UTBB FD-SOI technology using back-gate bias control. ESSCIRC (2013)
Vivek Asthana, Malathi Kar, Jean Jimenez, Sébastien Haendler, Philippe Galy
6T SRAM performance and power gain using double gate MOS in 28nm FDSOI technology. ICICDT (2013)
Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Franck Arnaud, Jalal Jomaah, Charalambos A. Dimitriadis, Gérard Ghibaudo
Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. ESSDERC (2012)
Claire Fenouillet-Béranger, P. Perreau, S. Denorme, L. Tosti, François Andrieu, Olivier Weber, S. Barnola, C. Arvet, Y. Campidelli, Sébastien Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, L. Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, A. Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Olivier Faynot, Thomas Skotnicki
Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. ESSCIRC (2009)
François Dieudonné, Sébastien Haendler, Jalal Jomaah, Francis Balestra
Low frequency noise in 0.12 mum partially and fully depleted SOI technology. Microelectron. Reliab. 43 (2) (2003)
Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. Microelectron. Reliab. 41 (6) (2001)
O. Rozeau, Sébastien Haendler, Jalal Jomaah, J. Boussey, Francis Balestra, C. Raynaud, J. L. Pelloie
0.25 μm SOI technologies performance for low-power radio-frequency applications. ICECS (2000)