Olivier Faynot

Publication Activity (10 Years)

Years Active: 2009-2021
Publications (10 Years): 6

Top Topics

Power Management

Negative Effects

Planar Surfaces

Top Venues

Microelectron. Reliab.

J. Low Power Electron.

Publications

Michelly de Souza, Sylvain Barraud, Mikaël Cassé, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello
Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors. ESSDERC (2021)
Yiming Qu, Ran Cheng, Wei Liu, Junkang Li, Bich-Yen Nguyen, Olivier Faynot, Nuo Xu, Bing Chen, Yi Zhao
Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs. IRPS (2018)
Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello
Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. Microelectron. Reliab. 79 (2017)
Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot
Analog performance of strained SOI nanowires down to 10K. ESSDERC (2016)
Maud Vinet, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, Vincent Mazzocchi, Cao-Minh Vincent Lu, Fabien Deprat, Jessy Micout, Bernard Previtali, Paul Besombes, Nils Rambal, François Andrieu, Olivier Billoint, Melanie Brocard, Sébastien Thuries, Guillaume Berhault, Cristiano Lopes Dos Santos, Gerald Cibrario, Fabien Clermidy, Daniel Gitlin, Olivier Faynot
Opportunities brought by sequential 3D CoolCube™ integration. ESSDERC (2016)
Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello
Drain current model for short-channel triple gate junctionless nanowire transistors. Microelectron. Reliab. 63 (2016)
Olivier Billoint, Hossam Sarhan, Iyad Rayane, Maud Vinet, Perrine Batude, Claire Fenouillet-Béranger, Olivier Rozeau, Gerald Cibrario, Fabien Deprat, A. Fustier, Julien Michallet, Olivier Faynot, Ogun Turkyilmaz, Jean-Frédéric Christmann, Sébastien Thuries, Fabien Clermidy
A comprehensive study of monolithic 3D cell on cell design using commercial 2D tool. DATE (2015)
G. Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. IRPS (2015)
J. Pelloux-Prayer, Mikaël Cassé, Francois Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. ESSDERC (2015)
François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, B. De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, V. Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, M. Haond
Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. ESSDERC (2014)
J. Mazurier, Olivier Weber, François Andrieu, Cyrille Le Royer, Olivier Faynot, Maud Vinet
Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs. ICICDT (2014)
Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo
Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. ESSDERC (2013)
Akiko Ohata, Young-Ho Bae, Sorin Cristoloveanu, Thomas Signamarcheix, J. Widiez, Bruno Ghyselen, Olivier Faynot, Laurent Clavelier
Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body. Microelectron. Reliab. 52 (11) (2012)
J. Mazurier, Olivier Weber, François Andrieu, Alain Toffoli, Olivier Thomas, Fabienne Allain, Jean-Philippe Noel, Marc Belleville, Olivier Faynot, T. Poiroux
Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below. J. Low Power Electron. 8 (1) (2012)
Carlos Navarro, Noel Rodriguez, Luca Donetti, Akiko Oliata, Francisco Gámiz, François Andrieu, Olivier Faynot, Claire Fenouillet-Béranger, Sorin Cristoloveanu
Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET. ESSDERC (2012)
Veeresh Deshpande, Sylvain Barraud, Xavier Jehl, Romain Wacquez, Maud Vinet, Remi Coquand, B. Roche, B. Voisin, Francois Triozon, C. Vizioz, L. Tosti, Bernard Previtali, P. Perreau, T. Poiroux, Marc Sanquer, Olivier Faynot
Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities. ESSDERC (2012)
Perrine Batude, Maud Vinet, Arnaud Pouydebasque, Cyrille Le Royer, Bernard Previtali, Claude Tabone, Jean-Michel Hartmann, Loic Sanchez, Laurence Baud, Veronique Carron, Alain Toffoli, Fabienne Allain, Vincent Mazzocchi, Dominique Lafond, Simon Deleonibus, Olivier Faynot
3D monolithic integration. ISCAS (2011)
Shashikanth Bobba, Ashutosh Chakraborty, Olivier Thomas, Perrine Batude, Thomas Ernst, Olivier Faynot, David Z. Pan, Giovanni De Micheli
CELONCEL: Effective design technique for 3-D monolithic integration targeting high performance integrated circuits. ASP-DAC (2011)
Claire Fenouillet-Béranger, P. Perreau, S. Denorme, L. Tosti, François Andrieu, Olivier Weber, S. Barnola, C. Arvet, Y. Campidelli, Sébastien Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, L. Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, A. Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Olivier Faynot, Thomas Skotnicki
Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. ESSCIRC (2009)