Francisco Gámiz

Publication Activity (10 Years)

Years Active: 2004-2022
Publications (10 Years): 12

Top Topics

Top Venues

Comput. Math. Appl.

Publications

Antonio Calomarde, Salvador Manich, Antonio Rubio, Francisco Gámiz
Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact. IEEE Access 10 (2022)
Carlos Molero, Ángel Palomares-Caballero, Antonio Alex-Amor, Ignacio Parellada-Serrano, Francisco Gámiz, Pablo Padilla, Juan F. Valenzuela-Valdés
Metamaterial-Based Reconfigurable Intelligent Surface: 3D Meta-Atoms Controlled by Graphene Structures. IEEE Commun. Mag. 59 (6) (2021)
Carlos Navarro, Carlos Marquez, Santiago Navarro, Francisco Gámiz
Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic. IEEE Access 8 (2020)
Antonio Calomarde, Antonio Rubio, Francesc Moll, Francisco Gámiz
Active Radiation-Hardening Strategy in Bulk FinFETs. IEEE Access 8 (2020)
Carlos Navarro, Carlos Marquez, Santiago Navarro, Carmen Lozano, Sehyun Kwon, Yong-Tae Kim, Francisco Gámiz
-FET 1T-DRAM Cells for Low-Power. IEEE Access 7 (2019)
Carlos Marquez, Carlos Navarro, Santiago Navarro, José Luis Padilla, Luca Donetti, Carlos Sampedro, Philippe Galy, Yong-Tae Kim, Francisco Gámiz
-FET Devices. IEEE Access 7 (2019)
Cristina Medina-Bailon, Carlos Sampedro, José Luis Padilla, Luca Donetti, Vihar P. Georgiev, Francisco Gámiz, Asen Asenov
Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator. LSSC (2019)
Carlos Marquez, Santiago Navarro, Carlos Navarro, Norberto Salazar, Philippe Galy, Sorin Cristoloveanu, Francisco Gámiz
-FET Memory Operation. ESSDERC (2019)
Carlos Sampedro, Cristina Medina-Bailon, Luca Donetti, José Luis Padilla, Carlos Navarro, Carlos Marquez, Francisco Gámiz
Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap. LSSC (2019)
Cristina Medina-Bailon, Toufik Sadi, Carlos Sampedro, José Luis Padilla, Luca Donetti, Vihar P. Georgiev, Francisco Gámiz, Asen Asenov
Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator. NMA (2018)
Luca Donetti, Carlos Sampedro, Francisco Javier García Ruiz, Andres Godoy, Francisco Gámiz
Three-dimensional multi-subband simulation of scaled FinFETs. ESSDERC (2017)
V. Velayudhan, Javier Martín-Martínez, Marc Porti, Carlos Couso, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Carlos Marquez, Francisco Gámiz
Threshold voltage and on-current Variability related to interface traps spatial distribution. ESSDERC (2015)
Francesco Vecil, José Miguel Mantas, María J. Cáceres, Carlos Sampedro, Andres Godoy, Francisco Gámiz
A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo. Comput. Math. Appl. 67 (9) (2014)
Enrique G. Marin, Francisco Javier García Ruiz, Andres Godoy, Isabel M. Tienda-Luna, Francisco Gámiz
Size-dependent electron mobility in InAs nanowires. ESSDERC (2014)
V. Velayudhan, Francisco Gámiz, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs. Microelectron. Reliab. 53 (9-11) (2013)
Raúl Valín Ferreiro, Carlos Sampedro, Natalia Seoane, Manuel Aldegunde, Antonio J. García-Loureiro, Andres Godoy, Francisco Gámiz
Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator. Int. J. High Perform. Comput. Appl. 27 (4) (2013)
Carlos Navarro, Noel Rodriguez, Luca Donetti, Akiko Oliata, Francisco Gámiz, François Andrieu, Olivier Faynot, Claire Fenouillet-Béranger, Sorin Cristoloveanu
Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET. ESSDERC (2012)
Juan Garcia Ortega, Francisco R. Palomo, Antonio Luque, Carmen Aracil, José M. Quero, Daniel Carrión, Francisco Gámiz, Plácido Revilla, Juan Pérez-Tinao, Manuel Moreno, Pedro Robles, Leopoldo García Franquelo
Reconfigurable distributed network control system for industrial plant automation. IEEE Trans. Ind. Electron. 51 (6) (2004)