Philippe Galy

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 16

Top Topics

Cmos Technology

Electromagnetic Fields

Top Venues

Microelectron. Reliab.

Publications

Giovani Britton, Salvador Mir, Estelle Lauga-Larroze, Benjamin Dormieu, Quentin Berlingard, Mickael Casse, Philippe Galy
Noise modeling using look-up tables and DC measurements for cryogenic applications. VLSI-SoC (2023)
Joao Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini, Franck Arnaud, Kevin Garello, Guillaume Prenat, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy
A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses. CoRR (2023)
Lauriane Contamin, Mikaël Cassé, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, André Juge, Emmanuel Vincent, Silvano De Franceschi, Tristan Meunier
Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K. IRPS (2022)
Mohammed Tmimi, Stefano D'Amico, Jean-Marc Duchamp, Philippe Ferrari, Philippe Galy
7-mm low-latency inter-chiplet serial link with silicon interposer. MWSCAS (2020)
Louise De Conti, Sorin Cristoloveanu, Maud Vinet, Philippe Galy
Thin-Film FD-SOI BIMOS Topologies for ESD Protection. IRPS (2019)
Philippe Galy, R. Lethiecq, Maryline Bawedin
1T1C Ultra low power relative Thermal-Voltage sensor in 28nm UTBB FD-SOI CMOS technology for standard, spatial and quantum applications. ICICDT (2019)
Carlos Marquez, Carlos Navarro, Santiago Navarro, José Luis Padilla, Luca Donetti, Carlos Sampedro, Philippe Galy, Yong-Tae Kim, Francisco Gámiz
-FET Devices. IEEE Access 7 (2019)
Carlos Marquez, Santiago Navarro, Carlos Navarro, Norberto Salazar, Philippe Galy, Sorin Cristoloveanu, Francisco Gámiz
-FET Memory Operation. ESSDERC (2019)
Mohammed Tmimi, Stefano D'Amico, Jean-Marc Duchamp, Philippe Ferrari, Philippe Galy
10Gbps Length adaptive on-chip RF serial link for Network on Chips and Multiprocessor chips applications. ICICDT (2019)
R. Lethiecq, Maryline Bawedin, Philippe Galy
Compact MOS Structure & Design for Ion-Ioff Thermal control in 28nm UTBB FD-SOI CMOS technology. ICICDT (2019)
Jorge Loayza, Nicolas Guitard, Bruno Allard, Luong-Viêt Phung, Blaise Jacquier, Philippe Galy
Simulation, characterization and implementation of a new SCR-based device with a turn-off capability for EOS-immune ESD power supply clamps in advanced CMOS technology nodes. Microelectron. Reliab. 85 (2018)
Philippe Galy, R. Lethiecq, Maryline Bawedin
Optimized in situ heating control on a new MOS device structure in 28nm UTBB FD-SOI CMOS technology. ICICDT (2018)
Philippe Galy, Wim Schoenmaker
Exploration of robustness limits and ESD EMI impact in a protection device for advanced CMOS technology. Microelectron. Reliab. (2017)
Louise De Conti, Thomas Bedecarrats, Maud Vinet, Sorin Cristoloveanu, Philippe Galy
Toward Gated-Diode-BIMOS for thin silicon ESD protection in advanced FD-SOI CMOS technologies. ICICDT (2017)
Benjamin Viale, M. Fer, L. Courau, Philippe Galy, Bruno Allard
On the need for a new ESD verification methodology to improve the reliability of ICs in advanced 28nm UTBB FD-SOI technology. Microelectron. Reliab. 64 (2016)
Philippe Galy, S. Athanasiou
Preliminary results on TFET - Gated diode in thin silicon film for IO design & ESD protection in 28nm UTBB FD-SOI CMOS technology. ICICDT (2016)
Philippe Galy, Wim Schoenmaker
Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes. Microelectron. Reliab. 55 (9-10) (2015)
S. Athanasiou, Sorin Cristoloveanu, Philippe Galy
Preliminary 3D TCAD electro-thermal simulations of BIMOS transistor in thin silicon film for ESD protection in FDSOI UTBB CMOS technology. ICICDT (2015)
Wim Schoenmaker, Philippe Galy
Integrated front-end/back-end simulation of electromagnetic fields, Lorentz force effects and fast current surges in microelectronic protection devices. ICICDT (2015)
Wim Schoenmaker, Quan Chen, Philippe Galy
Computation of Self-Induced Magnetic Field Effects Including the Lorentz Force for Fast-Transient Phenomena in Integrated-Circuit Devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 33 (6) (2014)
Philippe Galy, J. Bourgeat, D. Marin-Cudraz
New modular bi-directional power-switch and self ESD protected in 28nm UTBB FDSOI advanced CMOS technology. ICICDT (2014)
Vivek Asthana, Malathi Kar, Jean Jimenez, Jean-Philippe Noel, Sébastien Haendler, Philippe Galy
Circuit optimization of 4T, 6T, 8T, 10T SRAM bitcells in 28nm UTBB FD-SOI technology using back-gate bias control. ESSCIRC (2013)
Vivek Asthana, Malathi Kar, Jean Jimenez, Sébastien Haendler, Philippe Galy
6T SRAM performance and power gain using double gate MOS in 28nm FDSOI technology. ICICDT (2013)
Philippe Galy, T. Lim, J. Bourgeat, Jean Jimenez, Boris Heitz, D. Marin-Cudraz, Ph. Benech, J. M. Fournier
Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application. Microelectron. Reliab. 53 (9-11) (2013)
Philippe Galy, T. Lim, Jean Jimenez, Boris Heitz, Ph. Benech, J. M. Fournier, D. Marin-Cudraz
ESD protection using BIMOS transistor in 100 GHz RF application for advanced CMOS technology. ICICDT (2013)
Philippe Galy, Johan Bourgeat, Jean Jimenez, Nicolas Guitard, Alexandre Dray, Ghislain Troussier, Blaise Jacquier, David Marin-Cudraz
Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology. Microelectron. Reliab. 52 (9-10) (2012)
Jean Jimenez, Philippe Galy, Johan Bourgeat, Boris Heitz
High swing low capacitance ESD RF protections in advanced CMOS technologies. ICICDT (2012)
Philippe Galy, Jean Jimenez, Johan Bourgeat, A. Dray, Ghislain Troussier, Boris Heitz, Nicolas Guitard, David Marin-Cudraz, H. Beckrich-Ros
BIMOS transistor and its applications in ESD protection in advanced CMOS technology. ICICDT (2012)
Philippe Galy, J. Bourgeat, Jean Jimenez, Blaise Jacquier, D. Marin-Cudraz, Sylvain Dudit
matrix ESD power devices for advanced CMOS technologies. Microelectron. Reliab. 51 (9-11) (2011)
J. Bourgeat, Philippe Galy, A. Dray, Jean Jimenez, D. Marin-Cudraz, Blaise Jacquier
A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node. Microelectron. Reliab. 51 (9-11) (2011)
Philippe Galy, Sylvain Dudit, Michel Vallet, Ph. Larre, M. Bilinski, E. Petit, J. Beltritti, A. Dray, Jean Jimenez, F. Jezequel, R. Chevallier, C. Boutonnat, V. Varo
Inventory of silicon signatures induced by CDM event on deep sub-micronic CMOS-BICMOS technologies. Microelectron. Reliab. 50 (9-11) (2010)
J. Bourgeat, Christophe Entringer, Philippe Galy, Marise Bafleur, D. Marin-Cudraz
Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm. Microelectron. Reliab. 50 (9-11) (2010)
Philippe Galy, Sylvain Dudit, Michel Vallet, C. Richier, Christophe Entringer, F. Jezequel, E. Petit, J. Beltritti
Impact and damage on deep sub-micron CMOS technology induced by substrate current due to ESD stress. Microelectron. Reliab. 49 (9-11) (2009)
Christophe Entringer, Philippe Flatresse, Philippe Galy, Florence Azaïs, Pascal Nouet
Electro-thermal short pulsed simulation for SOI technology. Microelectron. Reliab. 46 (9-11) (2006)
Philippe Galy, V. Berland, A. Guilhaume, F. Blanc, J. P. Chante
Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD. Microelectron. Reliab. 44 (9-11) (2004)
Philippe Galy, V. Berland, B. Foucher, A. Guilhaume, J. P. Chante, S. Bardy, F. Blanc
Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse. Microelectron. Reliab. 42 (9-11) (2002)
A. Guilhaume, Philippe Galy, J. P. Chante, B. Foucher, F. Blanc
Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges. Microelectron. Reliab. 41 (9-10) (2001)