Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K.

Lauriane Contamin Mikaël Cassé Xavier Garros Fred Gaillard Maud Vinet Philippe Galy André Juge Emmanuel Vincent Silvano De Franceschi Tristan Meunier

Published in: IRPS (2022)

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