Login / Signup

Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K.

Lauriane ContaminMikaël CasséXavier GarrosFred GaillardMaud VinetPhilippe GalyAndré JugeEmmanuel VincentSilvano De FranceschiTristan Meunier
Published in: IRPS (2022)
Keyphrases
  • silicon on insulator
  • cmos technology
  • low voltage
  • ibm power processor
  • power consumption
  • parallel processing