Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K.
Lauriane ContaminMikaël CasséXavier GarrosFred GaillardMaud VinetPhilippe GalyAndré JugeEmmanuel VincentSilvano De FranceschiTristan MeunierPublished in: IRPS (2022)