Fred Gaillard

Publication Activity (10 Years)

Years Active: 2018-2024
Publications (10 Years): 14

Top Topics

Leakage Current

Silicon On Insulator

Top Venues

VLSI Technology and Circuits

Publications

A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. IRPS (2024)
Lauriane Contamin, Mikaël Cassé, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, André Juge, Emmanuel Vincent, Silvano De Franceschi, Tristan Meunier
Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K. IRPS (2022)
Heimanu Niebojewski, Benoit Bertrand, E. Nowak, Thomas Bedecarrats, Bruna Cardoso Paz, Lauriane Contamin, Pierre-André Mortemousque, V. Labracherie, L. Brevard, H. Sahin, Jean Charbonnier, C. Thomas, Myriam Assous, Mikaël Cassé, Matias Urdampilleta, Yann-Michel Niquet, François Perruchot, Fred Gaillard, Silvano De Franceschi, Tristan Meunier, Maud Vinet
Specificities of linear Si QD arrays integration and characterization. VLSI Technology and Circuits (2022)
Tadeu Mota Frutuoso, Xavier Garros, Jose Lugo-Alvarez, Roméo Kom Kammeugne, L. D. M. Zouknak, Abygaël Viey, W. van den Daele, Philippe Ferrari, Fred Gaillard
Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors. IRPS (2022)
Tadeu Mota Frutuoso, Xavier Garros, Perrine Batude, Laurent Brunet, Joris Lacord, B. Sklenard, V. Lapras, Claire Fenouillet-Béranger, M. Ribotta, A. Magalhaes-Lucas, J. Kanyandekwe, R. Kies, G. Romano, Edoardo Catapano, Mikaël Cassé, Jose Lugo-Alvarez, P. Ferrari, Fred Gaillard
Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration. VLSI Technology and Circuits (2022)
Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS (2021)
R. Kom Kammeugne, C. Leroux, Tadeu Mota Frutuoso, Jacques Cluzel, L. Vauche, Cyrille Le Royer, Romain Gwoziecki, Xavier Garros, Fred Gaillard, Matthew Charles, E. Bano, Gérard Ghibaudo
Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. ESSDERC (2021)
Laurent Grenouillet, Niccolo Castellani, Alain Persico, V. Meli, S. Martin, Olivier Billoint, R. Segaud, Stefania Bernasconi, C. Pellissier, Carine Jahan, Christelle Charpin-Nicolle, P. Dezest, Catherine Carabasse, Paul Besombes, S. Ricavy, N. P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, T. Magis, Messaoud Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, Elisa Vianello, Gabriel Molas, Fred Gaillard, Julien Arcamone, E. Nowak
16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. IMW (2021)
Tadeu Mota Frutuoso, Jose Lugo-Alvarez, Xavier Garros, Laurent Brunet, Joris Lacord, Louis Gerrer, Mikaël Cassé, Edoardo Catapano, Claire Fenouillet-Béranger, François Andrieu, Fred Gaillard, Philippe Ferrari
Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration. IRPS (2021)
Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS (2021)
B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, Francois Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, C. Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. ESSDERC (2021)
Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS (2019)
Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS (2018)
Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, Fred Gaillard
Study of forward AC stress degradation of GaN-on-Si Schottky diodes. Microelectron. Reliab. (2018)