Aby-Gaël Viey

Publication Activity (10 Years)

Years Active: 2019-2022
Publications (10 Years): 4

Top Topics

Chemical Vapor Deposition

Structuring Elements

Top Venues

Publications

Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, G. Despesse, Ferdinando Iucolano, Roberto Modica, A. Constant
Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. IRPS (2022)
Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS (2021)
B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, Francois Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, C. Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. ESSDERC (2021)
Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS (2019)