René Escoffier

Publication Activity (10 Years)

Years Active: 2009-2022
Publications (10 Years): 2

Top Topics

Database Replication

Normal Operation

Top Venues

Publications

Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, G. Despesse, Ferdinando Iucolano, Roberto Modica, A. Constant
Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. IRPS (2022)
William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, A. Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, F. Gaillard
A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. IRPS (2018)
B. Bernoux, René Escoffier, P. Jalbaud, Jean-Marie Dorkel
Source electrode evolution of a low voltage power MOSFET under avalanche cycling. Microelectron. Reliab. 49 (9-11) (2009)