William Vandendaele

Publication Activity (10 Years)

Years Active: 2017-2023
Publications (10 Years): 9

Top Topics

Charge Coupled Devices

Chemical Vapor Deposition

Structuring Elements

Top Venues

Microelectron. Reliab.

Publications

William Vandendaele, Camille Leurquin, R. Lavieville, Marie-Anne Jaud, Abygaël Viey, Romain Gwoziecki, B. Mohamad, E. Nowak, A. Constant, Ferdinando Iucolano
Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited). IRPS (2023)
Camille Leurquin, William Vandendaele, Romain Gwoziecki, B. Mohamad, G. Despesse, Ferdinando Iucolano, Roberto Modica, A. Constant
Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs. IRPS (2023)
Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, G. Despesse, Ferdinando Iucolano, Roberto Modica, A. Constant
Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. IRPS (2022)
Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS (2021)
B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, Francois Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, C. Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. ESSDERC (2021)
Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS (2019)
Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, Fred Gaillard
Study of forward AC stress degradation of GaN-on-Si Schottky diodes. Microelectron. Reliab. (2018)
William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, A. Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, F. Gaillard
A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. IRPS (2018)
William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, Gilles Reimbold
On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. ESSDERC (2017)