Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.
Aby-Gaël VieyWilliam VandendaeleMarie-Anne JaudJean CoignusJacques CluzelAlexis KrakovinskySimon MartinJérome BiscarratRomain GwozieckiVeronique SousaFred GaillardRoberto ModicaFerdinando IucolanoMatteo MeneghiniGaudenzio MeneghessoGérard GhibaudoPublished in: IRPS (2021)