Gérard Ghibaudo

Publication Activity (10 Years)

Years Active: 2000-2023
Publications (10 Years): 20

Top Topics

Top Venues

Microelectron. Reliab.

Publications

F. Serra Di Santa Maria, Francis Balestra, Christoforos G. Theodorou, Gérard Ghibaudo, Cezar B. Zota, Eunjung Cha
Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K. IRPS (2023)
F. Serra Di Santa Maria, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications. ESSDERC (2022)
Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS (2021)
Angeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou
VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits. ESSDERC (2021)
R. Kom Kammeugne, C. Leroux, Tadeu Mota Frutuoso, Jacques Cluzel, L. Vauche, Cyrille Le Royer, Romain Gwoziecki, Xavier Garros, Fred Gaillard, Matthew Charles, E. Bano, Gérard Ghibaudo
Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. ESSDERC (2021)
Angeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou
"Pinch to Detect": A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs. IRPS (2021)
B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, Francois Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, C. Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. ESSDERC (2021)
Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS (2019)
D. Nouguier, X. Federspiel, Gérard Ghibaudo, M. Rafik, David Roy
New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectron. Reliab. 87 (2018)
Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS (2018)
Krishna Pradeep, Theano A. Karatsori, Thierry Poiroux, Andre Juge, Patrick Scheer, Gilles Gouget, Emmanuel Josse, Gérard Ghibaudo
Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs. ESSDERC (2018)
Theano A. Karatsori, K. Bennamane, Christoforos G. Theodorou, L. Czornomaz, Jean Fompeyrine, Cezar B. Zota, Clarissa Convertino, Gérard Ghibaudo
Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator. ESSDERC (2018)
Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, Fred Gaillard
Study of forward AC stress degradation of GaN-on-Si Schottky diodes. Microelectron. Reliab. (2018)
Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, L. Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo
Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. ESSDERC (2017)
Giulio Torrente, Jean Coignus, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. Microelectron. Reliab. 79 (2017)
R. Lavieville, Theano A. Karatsori, Christoforos G. Theodorou, Sylvain Barraud, C. A. Dimitriadis, Gérard Ghibaudo
Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. ESSDERC (2016)
Gérard Ghibaudo
Electrical characterization of FDSOI CMOS devices. ESSDERC (2016)
Joseph Nguyen, David Turgis, David Bonciani, Brice Lhomme, Yann Carminati, Olivier Callen, Guillaume Guirleo, Lorenzo Ciampolini, Gérard Ghibaudo
RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs. NATW (2016)
Ioannis Messaris, Theano A. Karatsori, Nikolaos Fasarakis, Christoforos G. Theodorou, Spiros Nikolaidis, Gérard Ghibaudo, C. A. Dimitriadis
Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. Microelectron. Reliab. 56 (2016)
Christoforos G. Theodorou, Mouenes Fadlallah, Xavier Garros, Charalambos A. Dimitriadis, Gérard Ghibaudo
Noise-induced dynamic variability in nano-scale CMOS SRAM cells. ESSDERC (2016)
A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS (2015)
Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo
Impact of short-channel effects on velocity overshoot in MOSFET. NEWCAS (2015)
S. Souiki-Figuigui, Veronique Sousa, Gérard Ghibaudo, Gabriele Navarro, M. Coue, Luca Perniola, P. Zuliani, R. Annunziata
Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements. IRPS (2015)
Gaspard Hiblot, Quentin Rafhay, Loic Gaben, Gérard Ghibaudo, Frédéric Boeuf
Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR. ESSDERC (2015)
Luca Pirro, Irina Ionica, Sorin Cristoloveanu, Gérard Ghibaudo
Low-frequency noise in bare SOI wafers: Experiments and model. ESSDERC (2015)
Daniele Garbin, Elisa Vianello, Olivier Bichler, M. Azzaz, Quentin Rafhay, Philippe Candelier, Christian Gamrat, Gérard Ghibaudo, Barbara De Salvo, Luca Perniola
On the impact of OxRAM-based synapses variability on convolutional neural networks performance. NANOARCH (2015)
Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo
New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. IRPS (2015)
Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo
Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectron. Reliab. 55 (9-10) (2015)
Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. ESSDERC (2015)
Frederic Monsieur, Y. Denis, Denis Rideau, V. Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, Joris Lacord
The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. ESSDERC (2014)
Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo
Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI. ESSDERC (2014)
Omar Jonani Franco Piliado, Giancarlo Castaneda, Andre Juge, Gérard Ghibaudo
Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability. J. Low Power Electron. 10 (1) (2014)
Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo
Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime. ESSDERC (2014)
Eleftherios G. Ioannidis, Sébastien Haendler, Christoforos G. Theodorou, Nicolas Planes, C. A. Dimitriadis, Gérard Ghibaudo
Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. ESSDERC (2014)
Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo
Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. ESSDERC (2013)
Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, Bertrand Pelloux-Prayer, Shishir Kumar, Philippe Flatresse, Christophe Lecocq, Gérard Ghibaudo
Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI. ISCAS (2013)
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC (2013)
Min-Kyu Joo, Un Jeong Kim, Dae-Young Jeon, So Jeong Park, Mireille Mouis, Gyu-Tae Kim, Gérard Ghibaudo
Static and low frequency noise characterization of densely packed CNT-TFTs. ESSDERC (2012)
Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. IEEE J. Solid State Circuits 47 (5) (2012)
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. ESSDERC (2012)
Joris Lacord, Perrine Batude, Gérard Ghibaudo, Frédéric Boeuf
Analytical modeling of parasitics in monolithically integrated 3D inverters. ICICDT (2012)
Imed Ben Akkez, Antoine Cros, Claire Fenouillet-Béranger, Frédéric Boeuf, Quentin Rafhay, Francis Balestra, Gérard Ghibaudo
New parameter extraction method based on split C-V for FDSOI MOSFETs. ESSDERC (2012)
Nikolaos Fasarakis, Andreas Tsormpatzoglou, Dimitrios H. Tassis, Konstantinos Papathanasiou, C. A. Dimitriadis, Gérard Ghibaudo
Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs. ICECS (2012)
Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Franck Arnaud, Jalal Jomaah, Charalambos A. Dimitriadis, Gérard Ghibaudo
Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. ESSDERC (2012)
L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent
Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. Microelectron. Reliab. 50 (9-11) (2010)
E. Buccafurri, Abdelkrim Medjahdi, Francis Calmon, Raphael Clerc, Marco Pala, A. Poncet, Gérard Ghibaudo
Challenges and prospects of RF oscillators using silicon resonant tunneling diodes. ESSCIRC (2009)
L. Gerrer, Gérard Ghibaudo, G. Ribes
Oxide Soft Breakdown : From device modeling to small circuit simulation. ESSCIRC (2009)
Malick Diop, Nathalie Revil, M. Marin, Frederic Monsieur, Pascal Chevalier, Gérard Ghibaudo
Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. Microelectron. Reliab. 48 (8-9) (2008)
Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo
Impact of silicon nitride CESL on NLDEMOS transistor reliability. Microelectron. Reliab. 48 (8-9) (2008)
Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo
Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. Microelectron. Reliab. 47 (4-5) (2007)
Charles Leroux, Gérard Ghibaudo, Gilles Reimbold
Accurate determination of flat band voltage in advanced MOS structure. Microelectron. Reliab. 47 (4-5) (2007)
Gilles Reimbold, J. Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, F. Martin
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. Microelectron. Reliab. 47 (4-5) (2007)
D. Bauza, F. Rahmoune, R. Laqli, Gérard Ghibaudo
On the SILC mechanism in MOSFET's with ultrathin oxides. Microelectron. Reliab. 45 (5-6) (2005)
G. Ribes, S. Bruyère, M. Denais, David Roy, Gérard Ghibaudo
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. Microelectron. Reliab. 45 (5-6) (2005)
G. Ribes, S. Bruyère, M. Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo
power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectron. Reliab. 45 (12) (2005)
Emilie Deloffre, L. Montès, Gérard Ghibaudo, Sylvie Bruyère, Serge Blonkowski, Stéphane Bécu, Mickael Gros-Jean, Sébastien Crémer
Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. Microelectron. Reliab. 45 (5-6) (2005)
Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43 (8) (2003)
Gérard Ghibaudo, E. Vincent
Guest Editorial. Microelectron. Reliab. 43 (8) (2003)
M. Fadlallah, C. Petit, A. Meinertzhagen, Gérard Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. Microelectron. Reliab. 43 (9-11) (2003)
François Lime, Gérard Ghibaudo, B. Guillaumot
Charge trapping in SiO2/HfO2/TiN gate stack. Microelectron. Reliab. 43 (9-11) (2003)
Gérard Ghibaudo, T. Boutchacha
Electrical noise and RTS fluctuations in advanced CMOS devices. Microelectron. Reliab. 42 (4-5) (2002)
M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter, G. Guégan
Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs. Microelectron. Reliab. 42 (1) (2002)
B. Cretu, Francis Balestra, Gérard Ghibaudo, G. Guégan
Origin of hot carrier degradation in advanced nMOSFET devices. Microelectron. Reliab. 42 (9-11) (2002)
Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
Gate oxide Reliability assessment optimization. Microelectron. Reliab. 42 (9-11) (2002)
Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. Microelectron. Reliab. 41 (6) (2001)
Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. Microelectron. Reliab. 41 (7) (2001)
S. Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo
Body effect induced wear-out acceleration in ultra-thin oxides. Microelectron. Reliab. 41 (7) (2001)
Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectron. Reliab. 41 (9-10) (2001)
Raphael Clerc, Alessandro S. Spinelli, Gérard Ghibaudo, Charles Leroux, G. Pananakakis
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). Microelectron. Reliab. 41 (7) (2001)
François Lime, Gérard Ghibaudo, G. Guégan
Stress induced leakage current at low field in ultra thin oxides. Microelectron. Reliab. 41 (9-10) (2001)
S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo
Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectron. Reliab. 41 (9-10) (2001)
P. O'Sullivan, Raphael Clerc, Kevin G. McCarthy, Alan Mathewson, Gérard Ghibaudo
Direct tunnelling models for circuit simulation. Microelectron. Reliab. 41 (7) (2001)
M. Fadlallah, Arkadiusz Szewczyk, C. Giannakopoulos, B. Cretu, Frederic Monsieur, T. Devoivre, Jalal Jomaah, Gérard Ghibaudo
as gate dielectrics. Microelectron. Reliab. 41 (9-10) (2001)
M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter
Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors. ICECS (2000)