power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.
G. RibesS. BruyèreM. DenaisFrederic MonsieurVincent HuardDavid RoyGérard GhibaudoPublished in: Microelectron. Reliab. (2005)
Keyphrases
- power law
- leakage current
- low voltage
- field effect transistors
- electrical properties
- silicon dioxide
- high density
- steady state
- scale free
- power line
- mathematical analysis
- small world
- high speed
- design considerations
- learning curves
- power law distribution
- long range correlations
- power management
- clustering coefficient
- degree distribution
- cmos technology
- random graphs