David Roy

Publication Activity (10 Years)

Years Active: 2001-2024
Publications (10 Years): 16

Top Topics

Solar Radiation

Reliability Assessment

Top Venues

Microelectron. Reliab.

Publications

X. Federspiel, Cheikh Diouf, B. Arunachalam, David Roy, Florian Cacho
Non-conducting Hot carrier temperature activation and temperature sense effect. IRPS (2024)
A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. IRPS (2024)
C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy
Insight Into HCI Reliability on I/O Nitrided Devices. IRPS (2023)
Mathieu Sicre, X. Federspiel, Bastien Mamdy, David Roy, Francis Calmon
Characterization and modeling of DCR and DCR drift variability in SPADs. IRPS (2023)
Mathieu Sicre, David Roy, Françis Calmon
Hot-Carrier Degradation modeling of DCR drift in SPADs. ESSDERC (2023)
Mathieu Sicre, Megan Agnew, Christel Buj, Caroline Coutier, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Francis Calmon
Statistical measurements and Monte-Carlo simulations of DCR in SPADs. ESSCIRC (2022)
Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Francis Calmon
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. ESSCIRC (2021)
Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Francis Calmon
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. ESSDERC (2021)
Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS (2021)
Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix, D. Muller, David Roy
Process Optimization for HCI Improvement in I/O Analog Devices. IRPS (2019)
A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, F. Gaillard
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. IRPS (2019)
D. Nouguier, X. Federspiel, Gérard Ghibaudo, M. Rafik, David Roy
New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectron. Reliab. 87 (2018)
Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS (2018)
Giulio Torrente, Jean Coignus, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. Microelectron. Reliab. 79 (2017)
A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS (2015)
Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo
Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectron. Reliab. 55 (9-10) (2015)
Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. IEEE J. Solid State Circuits 47 (5) (2012)
Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix
Microscopic scale characterization and modeling of transistor degradation under HC stress. Microelectron. Reliab. 52 (11) (2012)
C. R. Parthasarathy, M. Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix
Designing in reliability in advanced CMOS technologies. Microelectron. Reliab. 46 (9-11) (2006)
G. Ribes, S. Bruyère, M. Denais, David Roy, Gérard Ghibaudo
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. Microelectron. Reliab. 45 (5-6) (2005)
G. Ribes, S. Bruyère, M. Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo
power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectron. Reliab. 45 (12) (2005)
Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43 (8) (2003)
G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard
New insights into the change of voltage acceleration and temperature activation of oxide breakdown. Microelectron. Reliab. 43 (8) (2003)
David Roy, S. Bruyère, E. Vincent, Frederic Monsieur
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. Microelectron. Reliab. 42 (9-11) (2002)
Thierry Devoivre, M. Lunenborg, C. Julien, J.-P. Carrere, P. Ferreira, W. J. Toren, A. VandeGoor, P. Gayet, T. Berger, O. Hinsinger, P. Vannier, Y. Trouiller, Y. Rody, P.-J. Goirand, R. Palla, I. Thomas, F. Guyader, David Roy, B. Borot, Nicolas Planes, Sylvie Naudet, F. Pico, D. Duca, F. Lalanne, D. Heslinga, M. Haond
Validated 90nm CMOS Technology Platform with Low-k Copper Interconnects for Advanced System-on-Chip (SoC). MTDT (2002)
Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
Gate oxide Reliability assessment optimization. Microelectron. Reliab. 42 (9-11) (2002)
S. Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo
Body effect induced wear-out acceleration in ultra-thin oxides. Microelectron. Reliab. 41 (7) (2001)
Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectron. Reliab. 41 (9-10) (2001)
S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo
Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectron. Reliab. 41 (9-10) (2001)