C. R. Parthasarathy

Publication Activity (10 Years)

Years Active: 2005-2017
Publications (10 Years): 3

Top Topics

Complex Environments

Cost Effectiveness

Implementation Details

Top Venues

Publications

Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, Sylvie Naudet, A. Jain, C. R. Parthasarathy, Alain Bravaix
Dynamic aging compensation and Safety measures in Automotive environment. IOLTS (2017)
Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, David Meyer, Sylvie Naudet, A. Jain, C. R. Parthasarathy, Alain Bravaix
Cognitive approach to support dynamic aging compensation. ITC (2017)
Florian Cacho, Ahmed Benhassain, Souhir Mhira, Ajith Sivadasan, Vincent Huard, P. Cathelin, V. Knopik, A. Jain, C. R. Parthasarathy, Lorena Anghel
Activity profiling: Review of different solutions to develop reliable and performant design. IOLTS (2016)
Ahmed Benhassain, Florian Cacho, Vincent Huard, M. Saliva, Lorena Anghel, C. R. Parthasarathy, A. Jain, Fabien Giner
Timing in-situ monitors: Implementation strategy and applications results. CICC (2015)
C. R. Parthasarathy, Alain Bravaix, Chloe Guérin, M. Denais, Vincent Huard
Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. PATMOS (2007)
C. R. Parthasarathy, M. Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix
Designing in reliability in advanced CMOS technologies. Microelectron. Reliab. 46 (9-11) (2006)
Vincent Huard, M. Denais, C. R. Parthasarathy
NBTI degradation: From physical mechanisms to modelling. Microelectron. Reliab. 46 (1) (2006)
Vincent Huard, M. Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent
A thorough investigation of MOSFETs NBTI degradation. Microelectron. Reliab. 45 (1) (2005)
Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45 (9-11) (2005)