Didier Goguenheim

Publication Activity (10 Years)

Years Active: 2001-2014
Publications (10 Years): 0

Top Topics

Weak Signal Detection

Distance Measurement

Wireless Sensor

Top Venues

Publications

Florian Barrau, Bruno Paille, Edith Kussener, Didier Goguenheim
Distance measurement using narrowband ZigBee devices. WOCC (2014)
Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim
Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities. Microelectron. Reliab. 49 (9-11) (2009)
D. Pic, Arnaud Régnier, V. Pean, Jean-Luc Ogier, Didier Goguenheim
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. Microelectron. Reliab. 48 (8-9) (2008)
D. Pic, Didier Goguenheim, Jean-Luc Ogier
thin oxides stressed to hard breakdown. Microelectron. Reliab. 48 (3) (2008)
Didier Goguenheim, D. Pic, Jean-Luc Ogier
Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions. Microelectron. Reliab. 47 (9-11) (2007)
D. Pic, Didier Goguenheim, Jean-Luc Ogier
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. Microelectron. Reliab. 47 (9-11) (2007)
Didier Goguenheim, Alain Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, Philippe Boivin
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. Microelectron. Reliab. 45 (3-4) (2005)
C. Trapes, Didier Goguenheim, Alain Bravaix
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. Microelectron. Reliab. 45 (5-6) (2005)
Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45 (9-11) (2005)
Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. Microelectron. Reliab. 44 (1) (2004)
Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. Microelectron. Reliab. 43 (8) (2003)
Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. Microelectron. Reliab. 41 (9-10) (2001)