Jean-Luc Ogier

Publication Activity (10 Years)

Years Active: 2007-2017
Publications (10 Years): 1

Top Topics

Arc Consistency

Electricity Consumption

Top Venues

Microelectron. Reliab.

J. Low Power Electron.

Publications

Giulio Torrente, Jean Coignus, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. Microelectron. Reliab. 79 (2017)
Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories. Microelectron. Reliab. 54 (9-10) (2014)
Benjamin Rebuffat, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Romain Laffont
Effect of AC stress on oxide TDDB and trapped charge in interface states. ISIC (2014)
Benjamin Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Olivier Paulet, Laurent Lopez, Romain Laffont
Effect of ions presence in the SiOCH inter metal dielectric structure. ESSDERC (2013)
Pierre Canet, Jérémy Postel-Pellerin, Jean-Luc Ogier
Access resistor modelling for EEPROM's retention test vehicle. Microelectron. Reliab. 53 (9-11) (2013)
Philippe Chiquet, Pascal Masson, Romain Laffont, Gilles Micolau, Jérémy Postel-Pellerin, Frédéric Lalande, Bernard Bouteille, Jean-Luc Ogier
layers using dynamic measurement protocols. Microelectron. Reliab. 52 (9-10) (2012)
Guillaume Just, Vincenzo Della Marca, Arnaud Régnier, Jean-Luc Ogier, Jérémy Postel-Pellerin, Jean-Michel Portal, Pascal Masson
Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability. J. Low Power Electron. 8 (5) (2012)
Y. Joly, Laurent Lopez, Jean-Michel Portal, Hassen Aziza, Jean-Luc Ogier, Y. Bert, Franck Julien, Pascal Fornara
Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress. Microelectron. Reliab. 51 (9-11) (2011)
Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim
Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities. Microelectron. Reliab. 49 (9-11) (2009)
D. Pic, Arnaud Régnier, V. Pean, Jean-Luc Ogier, Didier Goguenheim
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. Microelectron. Reliab. 48 (8-9) (2008)
D. Pic, Didier Goguenheim, Jean-Luc Ogier
thin oxides stressed to hard breakdown. Microelectron. Reliab. 48 (3) (2008)
Didier Goguenheim, D. Pic, Jean-Luc Ogier
Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions. Microelectron. Reliab. 47 (9-11) (2007)
D. Pic, Didier Goguenheim, Jean-Luc Ogier
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. Microelectron. Reliab. 47 (9-11) (2007)
Claire Le Roux, Laurent Lopez, Abdellatif Firiti, Jean-Luc Ogier, Frédéric Lalande, Romain Laffont, Gilles Micolau
A new method to quantify retention-failed cells of an EEPROM CAST. Microelectron. Reliab. 47 (9-11) (2007)