Vincenzo Della Marca

Publication Activity (10 Years)

Years Active: 2012-2023
Publications (10 Years): 9

Top Topics

Metal Oxide Semiconductor

Energy Consumption

Top Venues

Microelectron. Reliab.

Publications

Radouane Habhab, Vincenzo Della Marca, Pascal Masson, Nadia Miridi, Clement Pribat, Simon Jeannot, Thibault Kempf, Marc Mantelli, Philippe Lorenzini, Jean-Marc Voisin, Arnaud Régnier, Stephan Niel, Francesco La Rosa
40nm SONOS Embedded Select in Trench Memory. ESSDERC (2023)
Franck Melul, Thibault Kempf, Vincenzo Della Marca, Marc Bocquet, Madjid Akbal, Frederique Trenteseaux, Marc Mantelli, Arnaud Régnier, Stephan Niel, Francesco La Rosa
Hot Electron Source Side Injection Comprehension in 40nm eSTM™. IMW (2021)
J. Gasquez, Bastien Giraud, P. Boivin, Y. Moustapha-Rabault, Vincenzo Della Marca, J. P. Walder, Jean-Michel Portal
A Self-referenced and regulated sensing solution for PCM with OTS selector. VLSI-SoC (2021)
J. Gasquez, Bastien Giraud, P. Boivin, Y. Moustapha-Rabault, Vincenzo Della Marca, Jean-Michel Walder, J. M. Portal
A Regulated Sensing Solution Based on a Self-reference Principle for PCM + OTS Memory Array. VLSI-SoC (Selected Papers) (2021)
Romeric Gay, Vincenzo Della Marca, Hassen Aziza, Arnaud Régnier, Stephan Niel, Abderrezak Marzaki
Benchmarking and optimization of trench-based multi-gate transistors in a 40 nm non-volatile memory technology. DTIS (2021)
Jordan Locati, Vincenzo Della Marca, Christian Rivero, Arnaud Régnier, Stephan Niel, Karine Coulié
AC stress reliability study of a new high voltage transistor for logic memory circuits. IRPS (2020)
Jérémy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca, Adnan Harb
True random number generation exploiting SET voltage variability in resistive RAM memory arrays. NVMTS (2019)
Vincenzo Della Marca, Jérémy Postel-Pellerin, T. Kempf, Arnaud Régnier, Philippe Chiquet, Marc Bocquet
Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction. Microelectron. Reliab. (2018)
T. Kempf, Vincenzo Della Marca, L. Baron, F. Maugain, F. La Rosa, Stephan Niel, Arnaud Régnier, Jean-Michel Portal, Pascal Masson
Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip. IRPS (2018)
Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories. Microelectron. Reliab. 54 (9-10) (2014)
Benjamin Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Olivier Paulet, Laurent Lopez, Romain Laffont
Effect of ions presence in the SiOCH inter metal dielectric structure. ESSDERC (2013)
Guillaume Just, Vincenzo Della Marca, Arnaud Régnier, Jean-Luc Ogier, Jérémy Postel-Pellerin, Jean-Michel Portal, Pascal Masson
Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability. J. Low Power Electron. 8 (5) (2012)