Pierre Canet

Publication Activity (10 Years)

Years Active: 2000-2019
Publications (10 Years): 3

Top Topics

Reliability Analysis

Lateral Inhibition

Top Venues

Microelectron. Reliab.

Publications

Hassen Aziza, Hussein Bazzi, Jérémy Postel-Pellerin, Pierre Canet, Mathieu Moreau, Adnan Harb
An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits. DTIS (2019)
Jérémy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca, Adnan Harb
True random number generation exploiting SET voltage variability in resistive RAM memory arrays. NVMTS (2019)
Pierre Canet, Jérémy Postel-Pellerin, Hassen Aziza
Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories. Microelectron. Reliab. 64 (2016)
Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories. Microelectron. Reliab. 54 (9-10) (2014)
Pierre Canet, Jérémy Postel-Pellerin, Jean-Luc Ogier
Access resistor modelling for EEPROM's retention test vehicle. Microelectron. Reliab. 53 (9-11) (2013)
Jérémy Postel-Pellerin, Frédéric Lalande, Pierre Canet, Rachid Bouchakour, F. Jeuland, B. Bertello, B. Villard
Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories. Microelectron. Reliab. 49 (9-11) (2009)
Jérémy Postel-Pellerin, Frédéric Lalande, Pierre Canet, Rachid Bouchakour, F. Jeuland, L. Morancho
Modeling charge variation during data retention of MLC Flash memories. Microelectron. Reliab. 49 (9-11) (2009)
Anthony Maure, Pierre Canet, Frédéric Lalande, Bertrand Delsuc, Jean Devin
Flash Memory Cell Compact Modeling Using PSP Model. BMAS (2008)
Romain Laffont, J. Razafindramora, Pierre Canet, Rachid Bouchakour, J. M. Mirabel
Decreasing EEPROM Programming Bias With Negative Voltage, Reliability Impact. MTDT (2002)
Pierre Canet, Rachid Bouchakour, Nadia Harabech, Philippe Boivin, J. M. Mirabel
EEPROM programming study-time and degradation aspects. ISCAS (4) (2001)
Rachid Bouchakour, Nadia Harabech, Pierre Canet, Philippe Boivin, Jean Michel Mirable
Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect. ISCAS (4) (2001)
Nadia Harabech, Rachid Bouchakour, Pierre Canet, Philippe Pannier, Jean-Pierre Sorbier
oxide film including polysilicon gate depletion: validation with an EEPROM memory cell. ISCAS (2000)