Hussein Bazzi

Publication Activity (10 Years)

Years Active: 2017-2022
Publications (10 Years): 9

Top Topics

Power Dissipation

Lateral Inhibition

Metal Oxide Semiconductor

Top Venues

J. Electron. Test.

Publications

Hassen Aziza, Jérémy Postel-Pellerin, Hussein Bazzi, Mathieu Moreau, Adnan Harb
STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability. ISCAS (2022)
Hussein Bazzi, Hassen Aziza, Mathieu Moreau, Adnan Harb
Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability. J. Electron. Test. 37 (4) (2021)
Hussein Bazzi, Jérémy Postel-Pellerin, Hassen Aziza, Mathieu Moreau, Adnan Harb
Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation. DFT (2020)
Hussein Bazzi, Hassen Aziza, Mathieu Moreau, Adnan Harb
Design of a Novel Hybrid CMOS Non-Volatile SRAM Memory in 130nm RRAM Technology. DTIS (2020)
Hassen Aziza, Hussein Bazzi, Jérémy Postel-Pellerin, Pierre Canet, Mathieu Moreau, Adnan Harb
An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits. DTIS (2019)
Jérémy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca, Adnan Harb
True random number generation exploiting SET voltage variability in resistive RAM memory arrays. NVMTS (2019)
Hussein Bazzi, Adnan Harb, Hassen Aziza, Mathieu Moreau
Novel RRAM CMOS Non-Volatile Memory Cells in 130nm Technology. ICCA (2018)
Hussein Bazzi, Adnan Harb, Hassen Aziza, Mathieu Moreau
Design of Hybrid CMOS Non-Volatile SRAM Cells in 130nm RRAM Technology. ICM (2018)
Hussein Bazzi, Mohammad Abou Chanine, Ali Mohsen, Adnan Harb
A low-noise voltage-controlled ring oscillator in 28-nm FDSOI technology. ICM (2017)