Jérémy Postel-Pellerin

Publication Activity (10 Years)

Years Active: 2009-2024
Publications (10 Years): 12

Top Topics

Cerebellar Model

Energy Consumption

Synaptic Weights

Top Venues

Microelectron. Reliab.

Publications

Hassen Aziza, Jérémy Postel-Pellerin, Moritz Fieback, Said Hamdioui, Hanzhi Xun, Mottaqiallah Taouil, Karine Coulié, Wenceslas Rahajandraibe
Analysis of Conductance Variability in RRAM for Accurate Neuromorphic Computing. LATS (2024)
Hassen Aziza, Jérémy Postel-Pellerin, Hussein Bazzi, Mathieu Moreau, Adnan Harb
STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability. ISCAS (2022)
Franck Matteo, Roberto Simola, Franck Melul, Karine Coulié, Jérémy Postel-Pellerin, Arnaud Régnier
Simulation of state of the art EEPROM programming window closure during endurance degradation. DTIS (2021)
Hussein Bazzi, Jérémy Postel-Pellerin, Hassen Aziza, Mathieu Moreau, Adnan Harb
Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation. DFT (2020)
Hassen Aziza, Hussein Bazzi, Jérémy Postel-Pellerin, Pierre Canet, Mathieu Moreau, Adnan Harb
An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits. DTIS (2019)
Mounia Kharbouche-Harrari, Gregory di Pendina, Romain Wacquez, Bernard Dieny, Driss Aboulkassimi, Jérémy Postel-Pellerin, Jean-Michel Portal
Light-Weight Cipher Based on Hybrid CMOS/STT-MRAM: Power/Area Analysis. ISCAS (2019)
Mounia Kharbouche-Harrari, Romain Wacquez, Gregory di Pendina, Jean-Max Dutertre, Jérémy Postel-Pellerin, Driss Aboulkassimi, Jean-Michel Portal
Dual Detection of Heating and Photocurrent attacks (DDHP) Sensor using Hybrid CMOS/STT-MRAM. IOLTS (2019)
Jérémy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca, Adnan Harb
True random number generation exploiting SET voltage variability in resistive RAM memory arrays. NVMTS (2019)
Mounia Kharbouche-Harrari, Rana Alhalabi, Jérémy Postel-Pellerin, Romain Wacquez, Driss Aboulkassimi, Etienne Nowak, Ioan Lucian Prejbeanu, Guillaume Prenat, Gregory di Pendina
MRAM: from STT to SOT, for security and memory. DCIS (2018)
Vincenzo Della Marca, Jérémy Postel-Pellerin, T. Kempf, Arnaud Régnier, Philippe Chiquet, Marc Bocquet
Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction. Microelectron. Reliab. (2018)
Mounia Kharbouche-Harrari, Jérémy Postel-Pellerin, Gregory di Pendina, Romain Wacquez, Driss Aboulkassimi, Marc Bocquet, R. Sousa, R. Delattre, Jean-Michel Portal
Impact of a Laser Pulse on a STT-MRAM Bitcell: Security and Reliability Issues. IOLTS (2018)
Pierre Canet, Jérémy Postel-Pellerin, Hassen Aziza
Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories. Microelectron. Reliab. 64 (2016)
Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories. Microelectron. Reliab. 54 (9-10) (2014)
Pierre Canet, Jérémy Postel-Pellerin, Jean-Luc Ogier
Access resistor modelling for EEPROM's retention test vehicle. Microelectron. Reliab. 53 (9-11) (2013)
Philippe Chiquet, Pascal Masson, Romain Laffont, Gilles Micolau, Jérémy Postel-Pellerin, Frédéric Lalande, Bernard Bouteille, Jean-Luc Ogier
layers using dynamic measurement protocols. Microelectron. Reliab. 52 (9-10) (2012)
Guillaume Just, Vincenzo Della Marca, Arnaud Régnier, Jean-Luc Ogier, Jérémy Postel-Pellerin, Jean-Michel Portal, Pascal Masson
Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability. J. Low Power Electron. 8 (5) (2012)
Jérémy Postel-Pellerin, Romain Laffont, Gilles Micolau, Frédéric Lalande, Arnaud Régnier, Bernard Bouteille
Leakage paths identification in NVM using biased data retention. Microelectron. Reliab. 50 (9-11) (2010)
Jérémy Postel-Pellerin, Frédéric Lalande, Pierre Canet, Rachid Bouchakour, F. Jeuland, B. Bertello, B. Villard
Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories. Microelectron. Reliab. 49 (9-11) (2009)
Jérémy Postel-Pellerin, Frédéric Lalande, Pierre Canet, Rachid Bouchakour, F. Jeuland, L. Morancho
Modeling charge variation during data retention of MLC Flash memories. Microelectron. Reliab. 49 (9-11) (2009)