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oxide film including polysilicon gate depletion: validation with an EEPROM memory cell.
Nadia Harabech
Rachid Bouchakour
Pierre Canet
Philippe Pannier
Jean-Pierre Sorbier
Published in:
ISCAS (2000)
Keyphrases
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random access memory
low voltage
leakage current
design considerations
silicon dioxide
cmos technology
power management
field effect transistors
high speed
main memory
memory access
database management systems
operating system
block size
flash memory
electron microscopy