E. Vincent

Publication Activity (10 Years)

Years Active: 2001-2021
Publications (10 Years): 3

Top Topics

Supervised Machine Learning

Top Venues

Microelectron. Reliab.

Publications

Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS (2021)
Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS (2018)
Xavier Garros, Antoine Laurent, Alexandre Subirats, X. Federspiel, E. Vincent, Gilles Reimbold
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors. Microelectron. Reliab. 80 (2018)
L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent
Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. Microelectron. Reliab. 50 (9-11) (2010)
G. Néau, Frédéric Martinez, M. Valenza, J. C. Vildeuil, E. Vincent, Frédéric Boeuf, F. Payet, K. Rochereau
Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements. Microelectron. Reliab. 47 (4-5) (2007)
C. R. Parthasarathy, M. Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix
Designing in reliability in advanced CMOS technologies. Microelectron. Reliab. 46 (9-11) (2006)
Vincent Huard, M. Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent
A thorough investigation of MOSFETs NBTI degradation. Microelectron. Reliab. 45 (1) (2005)
Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45 (9-11) (2005)
Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. Microelectron. Reliab. 44 (1) (2004)
Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43 (8) (2003)
Gérard Ghibaudo, E. Vincent
Guest Editorial. Microelectron. Reliab. 43 (8) (2003)
C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent
MIM capacitance variation under electrical stress. Microelectron. Reliab. 43 (8) (2003)
Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. Microelectron. Reliab. 43 (8) (2003)
David Roy, S. Bruyère, E. Vincent, Frederic Monsieur
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. Microelectron. Reliab. 42 (9-11) (2002)
Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
Gate oxide Reliability assessment optimization. Microelectron. Reliab. 42 (9-11) (2002)
Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. Microelectron. Reliab. 41 (7) (2001)
S. Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo
Body effect induced wear-out acceleration in ultra-thin oxides. Microelectron. Reliab. 41 (7) (2001)
Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. Microelectron. Reliab. 41 (9-10) (2001)
Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectron. Reliab. 41 (9-10) (2001)
S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo
Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectron. Reliab. 41 (9-10) (2001)