J. C. Vildeuil

Publication Activity (10 Years)

Years Active: 2004-2007
Publications (10 Years): 0

Publications

Cédric Leyris, Frédéric Martinez, M. Valenza, Alain Hoffmann, J. C. Vildeuil
Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization. Microelectron. Reliab. 47 (4-5) (2007)
G. Néau, Frédéric Martinez, M. Valenza, J. C. Vildeuil, E. Vincent, Frédéric Boeuf, F. Payet, K. Rochereau
Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements. Microelectron. Reliab. 47 (4-5) (2007)
Cédric Leyris, Frédéric Martinez, Alain Hoffmann, M. Valenza, J. C. Vildeuil
N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis. Microelectron. Reliab. 47 (1) (2007)
P. Benoit, J. Raoult, C. Delseny, Fabien Pascal, L. Snadny, J. C. Vildeuil, M. Marin, B. Martinet, D. Cottin, Olivier Noblanc
Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors. Microelectron. Reliab. 45 (9-11) (2005)
M. Marin, Y. Akue Allogo, M. de Murcia, P. Llinares, J. C. Vildeuil
Low frequency noise characterization in 0.13 mum p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 mum technologies on 1/f noise. Microelectron. Reliab. 44 (7) (2004)