Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements.
G. NéauFrédéric MartinezM. ValenzaJ. C. VildeuilE. VincentFrédéric BoeufF. PayetK. RochereauPublished in: Microelectron. Reliab. (2007)
Keyphrases
- low frequency
- dual channel
- high frequency
- electromagnetic fields
- frequency domain
- wavelet transform
- high quality
- subband
- wavelet analysis
- low pass
- frequency band
- wavelet coefficients
- discrete wavelet transform
- visual quality
- multiresolution
- wavelet domain
- high resolution
- low and high frequency
- original images
- high frequency components
- virtual environment
- dielectric constant
- image quality