Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.
Alain BravaixDidier GoguenheimM. DenaisVincent HuardC. R. ParthasarathyF. PerrierNathalie RevilE. VincentPublished in: Microelectron. Reliab. (2005)
Keyphrases
- worst case
- leakage current
- low voltage
- silicon dioxide
- average case
- field effect transistors
- high speed
- error bounds
- lower bound
- space complexity
- upper bound
- arc consistency
- design considerations
- greedy algorithm
- cmos technology
- power line
- approximation algorithms
- low power
- worst case analysis
- np hard
- fuel cell
- recovery algorithm
- damage assessment
- image recovery
- electron microscopy
- running times
- low cost
- room temperature
- electrical properties
- data structure