Alain Bravaix

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 14

Top Topics

Cmos Technology

Functional Decomposition

Top Venues

Microelectron. Reliab.

Publications

Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix
Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. IRPS (2023)
Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho
New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes. IRPS (2022)
Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho
Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling. IRPS (2021)
Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho
Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. IRPS (2020)
Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix, D. Muller, David Roy
Process Optimization for HCI Improvement in I/O Analog Devices. IRPS (2019)
Vincent Huard, C. Ndiaye, M. Arabi, Narendra Parihar, X. Federspiel, Souhir Mhira, S. Mahapatra, Alain Bravaix
Key parameters driving transistor degradation in advanced strained SiGe channels. IRPS (2018)
Vincent Huard, Souhir Mhira, A. Barclais, X. Lecocq, F. Raugi, M. Cantournet, Alain Bravaix
Managing electrical reliability in consumer systems for improved energy efficiency. IRPS (2018)
Souhir Mhira, Vincent Huard, D. Arora, Philippe Flatresse, Alain Bravaix
Resilient automotive products through process, temperature and aging compensation schemes. IRPS (2018)
Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, Sylvie Naudet, A. Jain, C. R. Parthasarathy, Alain Bravaix
Dynamic aging compensation and Safety measures in Automotive environment. IOLTS (2017)
Vincent Huard, Souhir Mhira, Florian Cacho, Alain Bravaix
Enabling robust automotive electronic components in advanced CMOS nodes. Microelectron. Reliab. (2017)
Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, David Meyer, Sylvie Naudet, A. Jain, C. R. Parthasarathy, Alain Bravaix
Cognitive approach to support dynamic aging compensation. ITC (2017)
Alain Bravaix, Florian Cacho, X. Federspiel, C. Ndiaye, Souhir Mhira, Vincent Huard
Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. Microelectron. Reliab. 64 (2016)
Alain Bravaix, M. Saliva, Florian Cacho, X. Federspiel, C. Ndiaye, Souhir Mhira, Edith Kussener, E. Pauly, Vincent Huard
Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. IOLTS (2016)
C. Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. Microelectron. Reliab. 64 (2016)
M. Saliva, Florian Cacho, C. Ndiaye, Vincent Huard, D. Angot, Alain Bravaix, Lorena Anghel
Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology. IRPS (2015)
M. Saliva, Florian Cacho, Vincent Huard, X. Federspiel, D. Angot, Ahmed Benhassain, Alain Bravaix, Lorena Anghel
Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI. DATE (2015)
Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix
Microscopic scale characterization and modeling of transistor degradation under HC stress. Microelectron. Reliab. 52 (11) (2012)
F. Molière, B. Foucher, Philippe Perdu, Alain Bravaix
Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics. Microelectron. Reliab. 49 (9-11) (2009)
Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix
Reliability aspects of gate oxide under ESD pulse stress. Microelectron. Reliab. 49 (12) (2009)
D. Lachenal, Alain Bravaix, Frederic Monsieur, Yannick Rey-Tauriac
Degradation mechanism understanding of NLDEMOS SOI in RF applications. Microelectron. Reliab. 47 (9-11) (2007)
C. R. Parthasarathy, Alain Bravaix, Chloe Guérin, M. Denais, Vincent Huard
Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. PATMOS (2007)
C. R. Parthasarathy, M. Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix
Designing in reliability in advanced CMOS technologies. Microelectron. Reliab. 46 (9-11) (2006)
Didier Goguenheim, Alain Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, Philippe Boivin
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. Microelectron. Reliab. 45 (3-4) (2005)
Vincent Huard, M. Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent
A thorough investigation of MOSFETs NBTI degradation. Microelectron. Reliab. 45 (1) (2005)
Yannick Rey-Tauriac, J. Badoc, B. Reynard, R. A. Bianchi, D. Lachenal, Alain Bravaix
Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. Microelectron. Reliab. 45 (9-11) (2005)
C. Trapes, Didier Goguenheim, Alain Bravaix
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. Microelectron. Reliab. 45 (5-6) (2005)
Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45 (9-11) (2005)
Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. Microelectron. Reliab. 44 (1) (2004)
Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. Microelectron. Reliab. 43 (8) (2003)
Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. Microelectron. Reliab. 41 (9-10) (2001)