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Reliability aspects of gate oxide under ESD pulse stress.

Adrien IlleWolfgang StadlerThomas PomplHarald GossnerTilo BrodbeckKai EsmarkPhilipp RiessDavid AlvarezKiran V. ChattyRobert GauthierAlain Bravaix
Published in: Microelectron. Reliab. (2009)
Keyphrases
  • silicon dioxide
  • leakage current
  • neural network
  • reliability analysis
  • image sequences
  • computer simulation
  • room temperature
  • field effect transistors
  • reliability assessment
  • nano scale