C. Ndiaye

Publication Activity (10 Years)

Years Active: 2015-2018
Publications (10 Years): 5

Top Topics

Top Venues

Microelectron. Reliab.

Publications

Vincent Huard, C. Ndiaye, M. Arabi, Narendra Parihar, X. Federspiel, Souhir Mhira, S. Mahapatra, Alain Bravaix
Key parameters driving transistor degradation in advanced strained SiGe channels. IRPS (2018)
M. Arabi, A. Cros, X. Federspiel, C. Ndiaye, Vincent Huard, M. Rafik
Modeling self-heating effects in advanced CMOS nodes. IRPS (2018)
Alain Bravaix, Florian Cacho, X. Federspiel, C. Ndiaye, Souhir Mhira, Vincent Huard
Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. Microelectron. Reliab. 64 (2016)
Alain Bravaix, M. Saliva, Florian Cacho, X. Federspiel, C. Ndiaye, Souhir Mhira, Edith Kussener, E. Pauly, Vincent Huard
Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. IOLTS (2016)
C. Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. Microelectron. Reliab. 64 (2016)
M. Saliva, Florian Cacho, C. Ndiaye, Vincent Huard, D. Angot, Alain Bravaix, Lorena Anghel
Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology. IRPS (2015)