Vincent Huard

Publication Activity (10 Years)

Years Active: 2003-2024
Publications (10 Years): 30

Top Topics

Failure Prediction

Digital Circuits

Linear Correlation

Top Venues

Microelectron. Reliab.

Publications

Ryuichi Nakajima, Takafumi Ito, Shotaro Sugitani, Tomoya Kii, Mitsunori Ebara, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean-Christophe Eloy, Olivier Montfort, Lionel Jure, Vincent Huard
Soft-Error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies. IEICE Trans. Electron. 107 (7) (2024)
Vincent Huard
Embracing the new era of AI at the edge. ICICDT (2023)
Francesco Conti, Davide Rossi, Gianna Paulin, Anaelo Garofalo, Alfio Di Mauro, Georg Rutishauer, Gianmarco Ottavi, Manuel Eggimann, Hayate Okuhara, Vincent Huard, Olivier Montfort, Lionel Jure, Nils Exibard, Pascal Gouedo, Mathieu Louvat, Emmanuel Botte, Luca Benini
A 12.4TOPS/W @ 136GOPS AI-IoT System-on-Chip with 16 RISC-V, 2-to-8b Precision-Scalable DNN Acceleration and 30%-Boost Adaptive Body Biasing. ISSCC (2023)
Shotaro Sugitani, Ryuichi Nakajima, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean-Christophe Eloy, Olivier Montfort, Lionel Jure, Vincent Huard
Radiation Hardness Evaluations of a Stacked Flip Flop in a 22 nm FD-SOI Process by Heavy-Ion Irradiation. IOLTS (2023)
Sidina Wane, T. V. Dinh, Q. H. Tran, Damienne Bajon, F. Ferrero, Lionel Duvillaret, Gwenael Gaborit, J. Sombrin, E. de Lédinghen, P. Laban, Vincent Huard, Souhir Mhira, L. Tombakdjian, P. Ratajczak, A. Bousseksou
Correlation Technologies for OTA Testing of mmWave Mobile Devices Using Energy Metrics. RWS (2022)
Vincent Huard, F. Jacquet, Souhir Mhira, Lionel Jure, O. Montfort, M. Louvat, L. Zaia, F. Bertrand, E. Acacia, O. Caffin, H. Belhadj, O. Durand, Nils Exibard, V. Bonnet, A. Charvier, Paolo Bernardi, Riccardo Cantoro
Runtime Test Solution for Adaptive Aging Compensation and Fail Operational Safety mode. IRPS (2022)
Yasser Moursy, Thiago Raupp da Rosa, Lionel Jure, Anthony Quelen, Sébastien Genevey, Lionel Pierrefeu, Emmanuel G. Collins Jr., Joerg Winkler, Jonathan Park, Gaël Pillonnet, Vincent Huard, Andrea Bonzo, Philippe Flatresse
PVT-Aware Digital-Flow-Compatible Adaptive Back-Biasing Regulator with Scalable Drivers Achieving 450% Frequency Boosting and 30% Power Reduction in 22nm FDSOI Technology. ISSCC (2021)
Ajith Sivadasan, Riddhi Jitendrakumar Shah, Vincent Huard, Florian Cacho, Lorena Anghel
NBTI aged cell rejuvenation with back biasing and resulting critical path reordering for digital circuits in 28nm FDSOI. DATE (2018)
Xavier Garros, Alexandre Subirats, Gilles Reimbold, F. Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik
A new method for quickly evaluating reversible and permanent components of the BTI degradation. IRPS (2018)
Vincent Huard, C. Ndiaye, M. Arabi, Narendra Parihar, X. Federspiel, Souhir Mhira, S. Mahapatra, Alain Bravaix
Key parameters driving transistor degradation in advanced strained SiGe channels. IRPS (2018)
Vincent Huard, Souhir Mhira, A. Barclais, X. Lecocq, F. Raugi, M. Cantournet, Alain Bravaix
Managing electrical reliability in consumer systems for improved energy efficiency. IRPS (2018)
Souhir Mhira, Vincent Huard, D. Arora, Philippe Flatresse, Alain Bravaix
Resilient automotive products through process, temperature and aging compensation schemes. IRPS (2018)
Riddhi Jitendrakumar Shah, Florian Cacho, Vincent Huard, Souhir Mhira, D. Arora, P. Agarwal, S. Kumar, S. Balaraman, B. Singh, Lorena Anghel
Investigation of speed sensors accuracy for process and aging compensation. IRPS (2018)
M. Arabi, A. Cros, X. Federspiel, C. Ndiaye, Vincent Huard, M. Rafik
Modeling self-heating effects in advanced CMOS nodes. IRPS (2018)
R. Lajmi, Florian Cacho, Estelle Lauga-Larroze, Sylvain Bourdel, Ph. Benech, Vincent Huard, X. Federspiel
Characterization of Low Drop-Out during ageing and design for yield. Microelectron. Reliab. (2017)
Ajith Sivadasan, Armelle Notin, Vincent Huard, Etienne Maurin, Souhir Mhira, Florian Cacho, Lorena Anghel
Workload dependent reliability timing analysis flow. DATE (2017)
Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, Sylvie Naudet, A. Jain, C. R. Parthasarathy, Alain Bravaix
Dynamic aging compensation and Safety measures in Automotive environment. IOLTS (2017)
Florian Cacho, Ahmed Benhassain, Riddhi Jitendrakumar Shah, Souhir Mhira, Vincent Huard, Lorena Anghel
Investigation of critical path selection for in-situ monitors insertion. IOLTS (2017)
Vincent Huard, Souhir Mhira, Florian Cacho, Alain Bravaix
Enabling robust automotive electronic components in advanced CMOS nodes. Microelectron. Reliab. (2017)
Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, David Meyer, Sylvie Naudet, A. Jain, C. R. Parthasarathy, Alain Bravaix
Cognitive approach to support dynamic aging compensation. ITC (2017)
Alain Bravaix, Florian Cacho, X. Federspiel, C. Ndiaye, Souhir Mhira, Vincent Huard
Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. Microelectron. Reliab. 64 (2016)
Alain Bravaix, M. Saliva, Florian Cacho, X. Federspiel, C. Ndiaye, Souhir Mhira, Edith Kussener, E. Pauly, Vincent Huard
Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. IOLTS (2016)
Florian Cacho, Ahmed Benhassain, Souhir Mhira, Ajith Sivadasan, Vincent Huard, P. Cathelin, V. Knopik, A. Jain, C. R. Parthasarathy, Lorena Anghel
Activity profiling: Review of different solutions to develop reliable and performant design. IOLTS (2016)
Ajith Sivadasan, Florian Cacho, Sidi Ahmed Benhassain, Vincent Huard, Lorena Anghel
Study of workload impact on BTI HCI induced aging of digital circuits. DATE (2016)
Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, D. Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, M. Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. VLSI Circuits (2016)
Lorena Anghel, Ahmed Benhassain, Ajith Sivadasan, Florian Cacho, Vincent Huard
Early system failure prediction by using aging in situ monitors: Methodology of implementation and application results. VTS (2016)
C. Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. Microelectron. Reliab. 64 (2016)
Ahmed Benhassain, Souhir Mhira, Florian Cacho, Vincent Huard, Lorena Anghel
In-situ slack monitors: taking up the challenge of on-die monitoring of variability and reliability. IVSW (2016)
Ajith Sivadasan, Florian Cacho, Sidi Ahmed Benhassain, Vincent Huard, Lorena Anghel
Workload Impact on BTI HCI Induced Aging of Digital Circuits: A System level Analysis. ERMAVSS@DATE (2016)
Ahmed Benhassain, Florian Cacho, Vincent Huard, Lorena Anghel
Early failure prediction by using in-situ monitors: Implementation and application results. ERMAVSS@DATE (2016)
Ahmed Benhassain, Florian Cacho, Vincent Huard, M. Saliva, Lorena Anghel, C. R. Parthasarathy, A. Jain, Fabien Giner
Timing in-situ monitors: Implementation strategy and applications results. CICC (2015)
Olivier Héron, Chiara Sandionigi, E. Piriou, Safa Mbarek, Vincent Huard
Workload-dependent BTI analysis in a processor core at high level. IRPS (2015)
A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS (2015)
M. Saliva, Florian Cacho, C. Ndiaye, Vincent Huard, D. Angot, Alain Bravaix, Lorena Anghel
Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology. IRPS (2015)
P. Mora, X. Federspiel, Florian Cacho, Vincent Huard, W. Arfaoui
28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation. IRPS (2015)
M. Saliva, Florian Cacho, Vincent Huard, X. Federspiel, D. Angot, Ahmed Benhassain, Alain Bravaix, Lorena Anghel
Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI. DATE (2015)
Vincent Huard, D. Angot, Florian Cacho
From BTI variability to product failure rate: A technology scaling perspective. IRPS (2015)
Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix
Microscopic scale characterization and modeling of transistor degradation under HC stress. Microelectron. Reliab. 52 (11) (2012)
Vincent Huard, N. Ruiz Amador, Florian Cacho, E. Pion
A bottom-up approach for System-On-Chip reliability. Microelectron. Reliab. 51 (9-11) (2011)
N. Ruiz Amador, Vincent Huard, E. Pion, Florian Cacho, Damien Croain, V. Robert, Sylvain Engels, Philippe Flatresse, Lorena Anghel
Bottom-up digital system-level reliability modeling. CICC (2011)
C. R. Parthasarathy, Alain Bravaix, Chloe Guérin, M. Denais, Vincent Huard
Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. PATMOS (2007)
C. R. Parthasarathy, M. Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix
Designing in reliability in advanced CMOS technologies. Microelectron. Reliab. 46 (9-11) (2006)
Vincent Huard, M. Denais, C. R. Parthasarathy
NBTI degradation: From physical mechanisms to modelling. Microelectron. Reliab. 46 (1) (2006)
Vincent Huard, M. Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent
A thorough investigation of MOSFETs NBTI degradation. Microelectron. Reliab. 45 (1) (2005)
G. Ribes, S. Bruyère, M. Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo
power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectron. Reliab. 45 (12) (2005)
Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45 (9-11) (2005)
Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43 (8) (2003)
G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard
New insights into the change of voltage acceleration and temperature activation of oxide breakdown. Microelectron. Reliab. 43 (8) (2003)