Lionel Jure

Publication Activity (10 Years)

Years Active: 2021-2024
Publications (10 Years): 5

Top Topics

Field Effect Transistors

Power Dissipation

Top Venues

IEICE Trans. Electron.

Publications

Ryuichi Nakajima, Takafumi Ito, Shotaro Sugitani, Tomoya Kii, Mitsunori Ebara, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean-Christophe Eloy, Olivier Montfort, Lionel Jure, Vincent Huard
Soft-Error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies. IEICE Trans. Electron. 107 (7) (2024)
Francesco Conti, Davide Rossi, Gianna Paulin, Anaelo Garofalo, Alfio Di Mauro, Georg Rutishauer, Gianmarco Ottavi, Manuel Eggimann, Hayate Okuhara, Vincent Huard, Olivier Montfort, Lionel Jure, Nils Exibard, Pascal Gouedo, Mathieu Louvat, Emmanuel Botte, Luca Benini
A 12.4TOPS/W @ 136GOPS AI-IoT System-on-Chip with 16 RISC-V, 2-to-8b Precision-Scalable DNN Acceleration and 30%-Boost Adaptive Body Biasing. ISSCC (2023)
Shotaro Sugitani, Ryuichi Nakajima, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean-Christophe Eloy, Olivier Montfort, Lionel Jure, Vincent Huard
Radiation Hardness Evaluations of a Stacked Flip Flop in a 22 nm FD-SOI Process by Heavy-Ion Irradiation. IOLTS (2023)
Vincent Huard, F. Jacquet, Souhir Mhira, Lionel Jure, O. Montfort, M. Louvat, L. Zaia, F. Bertrand, E. Acacia, O. Caffin, H. Belhadj, O. Durand, Nils Exibard, V. Bonnet, A. Charvier, Paolo Bernardi, Riccardo Cantoro
Runtime Test Solution for Adaptive Aging Compensation and Fail Operational Safety mode. IRPS (2022)
Yasser Moursy, Thiago Raupp da Rosa, Lionel Jure, Anthony Quelen, Sébastien Genevey, Lionel Pierrefeu, Emmanuel G. Collins Jr., Joerg Winkler, Jonathan Park, Gaël Pillonnet, Vincent Huard, Andrea Bonzo, Philippe Flatresse
PVT-Aware Digital-Flow-Compatible Adaptive Back-Biasing Regulator with Scalable Drivers Achieving 450% Frequency Boosting and 30% Power Reduction in 22nm FDSOI Technology. ISSCC (2021)