Shotaro Sugitani

Publication Activity (10 Years)

Years Active: 2023-2024
Publications (10 Years): 7

Top Topics

Field Effect Transistors

Evolution Process

Measurement Errors

Top Venues

IEICE Trans. Electron.

Publications

Ryuichi Nakajima, Takafumi Ito, Shotaro Sugitani, Tomoya Kii, Mitsunori Ebara, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean-Christophe Eloy, Olivier Montfort, Lionel Jure, Vincent Huard
Soft-Error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies. IEICE Trans. Electron. 107 (7) (2024)
Jun Furuta, Shotaro Sugitani, Ryuichi Nakajima, Kazutoshi Kobayashi
A Partially-redundant Flip-flip Suitable for Mitigating Single Event Upsets in a FD-SOI Process with Low Performance Overhead. IRPS (2024)
Ryuichi Nakajima, Shotaro Sugitani, Haruto Sugisaki, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi, Makoto Sakai
An Approach to Neutron-Induced SER Evaluation Using a Clinical 290 MeV/ u Carbon Beam and Particle Transport Simulations. IRPS (2024)
Shotaro Sugitani, Ryuichi Nakajima, Keita Yoshida, Jun Furuta, Kazutoshi Kobayashi
Radiation Hardened Flip-Flops with low Area, Delay and Power Overheads in a 65 nm bulk process. IRPS (2023)
Haruto Sugisaki, Ryuichi Nakajima, Shotaro Sugitani, Jun Furuta, Kazutoshi Kobayashi
Frequency Dependency of Soft Error Rates Based on Dynamic Soft Error Measurements. ICICDT (2023)
Keita Yoshida, Ryuichi Nakajima, Shotaro Sugitani, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi
SEU Sensitivity of PMOS and NMOS Transistors in a 65 nm Bulk Process by α-Particle Irradiation. ICICDT (2023)
Shotaro Sugitani, Ryuichi Nakajima, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean-Christophe Eloy, Olivier Montfort, Lionel Jure, Vincent Huard
Radiation Hardness Evaluations of a Stacked Flip Flop in a 22 nm FD-SOI Process by Heavy-Ion Irradiation. IOLTS (2023)