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Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes.
Alain Bravaix
M. Saliva
Florian Cacho
X. Federspiel
C. Ndiaye
Souhir Mhira
Edith Kussener
E. Pauly
Vincent Huard
Published in:
IOLTS (2016)
Keyphrases
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metal oxide semiconductor
low cost
circuit design
image processing
power consumption
high resolution
high speed
low power
power supply
nm technology