28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications.

Rossella Ranica Nicolas Planes Vincent Huard Olivier Weber D. Noblet Damien Croain Fabien Giner Sylvie Naudet P. Mergault S. Ibars A. Villaret M. Parra Sébastien Haendler M. Quoirin Florian Cacho C. Julien F. Terrier Lorenzo Ciampolini David Turgis Christophe Lecocq Franck Arnaud

Published in: VLSI Circuits (2016)

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