David Turgis

Publication Activity (10 Years)

Years Active: 2012-2021
Publications (10 Years): 7

Top Topics

Magnetic Recording

Rademacher Complexity

Top Venues

IEEE Trans. Circuits Syst. I Regul. Pap.

Publications

Andrea Redaelli, Anna Gandolfo, G. Samanni, E. Gomiero, E. Petroni, Luca Scotti, A. Lippiello, Paolo Mattavelli, J. Jasse, D. Codegoni, A. Serafini, Rossella Ranica, C. Boccaccio, J. Sandrini, R. Berthelon, J. C. Grenier, Olivier Weber, David Turgis, A. Valery, S. Del Medico, V. Caubet, J. P. Reynard, Didier Dutartre, L. Favennec, A. Conte, Fabio Disegni, M. De Tomasi, A. Ventre, M. Baldo, Daniele Ielmini, Alfonso Maurelli, P. Ferreira, Franck Arnaud, F. Piazza, Paolo Cappelletti, R. Annunziata, R. Gonella
Improving Ge-rich GST ePCM reliability through BEOL engineering. ESSDERC (2021)
Reda Boumchedda, Jean-Philippe Noel, Bastien Giraud, Adam Makosiej, Marco Antonio Rios, Eduardo Esmanhotto, Emilien Bourde-Cicé, Mathis Bellet, David Turgis, Edith Beigné
Energy-Efficient 4T SRAM Bitcell with 2T Read-Port for Ultra-Low-Voltage Operations in 28 nm 3D Monolithic CoolCubeTM Technology. NANOARCH (2018)
Anuj Grover, G. S. Visweswaran, Chittoor R. Parthasarathy, Mohammad Daud, David Turgis, Bastien Giraud, Jean-Philippe Noel, Ivan Miro Panades, Guillaume Moritz, Edith Beigné, Philippe Flatresse, Promod Kumar, Shamsi Azmi
A 32 kb 0.35-1.2 V, 50 MHz-2.5 GHz Bit-Interleaved SRAM With 8 T SRAM Cell and Data Dependent Write Assist in 28-nm UTBB-FDSOI CMOS. IEEE Trans. Circuits Syst. I Regul. Pap. (9) (2017)
Reda Boumchedda, Jean-Philippe Noel, Bastien Giraud, Kaya Can Akyel, Melanie Brocard, David Turgis, Edith Beigné
High-Density 4T SRAM Bitcell in 14-nm 3-D CoolCube Technology Exploiting Assist Techniques. IEEE Trans. Very Large Scale Integr. Syst. 25 (8) (2017)
Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, D. Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, M. Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. VLSI Circuits (2016)
Joseph Nguyen, David Turgis, David Bonciani, Brice Lhomme, Yann Carminati, Olivier Callen, Guillaume Guirleo, Lorenzo Ciampolini, Gérard Ghibaudo
RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs. NATW (2016)
Lorenzo Ciampolini, Jean-Christophe Lafont, Faress Tissafi Drissi, Jean-Paul Morin, David Turgis, Xavier Jonsson, Cyril Desclèves, Joseph Nguyen
Efficient yield estimation through generalized importance sampling with application to NBL-assisted SRAM bitcells. ICCAD (2016)
Anuj Grover, Promod Kumar, Mohammad Daud, G. S. Visweswaran, Chittoor R. Parthasarathy, Jean-Philippe Noel, David Turgis, Bastien Giraud, Guillaume Moritz
Low Standby Power Capacitively Coupled Sense Amplifier for wide voltage range operation of dual rail SRAMs. ICICDT (2015)
Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo
Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI. ESSDERC (2014)
Robin Wilson, Edith Beigné, Philippe Flatresse, Alexandre Valentian, Fady Abouzeid, Thomas Benoist, Christian Bernard, Sebastien Bernard, Olivier Billoint, Sylvain Clerc, Bastien Giraud, Anuj Grover, Julien Le Coz, Ivan Miro Panades, Jean-Philippe Noël, Bertrand Pelloux-Prayer, Philippe Roche, Olivier Thomas, Yvain Thonnart, David Turgis, Fabien Clermidy, Philippe Magarshack
27.1 A 460MHz at 397mV, 2.6GHz at 1.3V, 32b VLIW DSP, embedding FMAX tracking. ISSCC (2014)
Guillaume Moritz, Bastien Giraud, Jean-Philippe Noel, David Turgis, Anuj Grover
Optimization of a voltage sense amplifier operating in ultra wide voltage range with back bias design techniques in 28nm UTBB FD-SOI technology. ICICDT (2013)
Anis Feki, Bruno Allard, David Turgis, Jean-Christophe Lafont, Lorenzo Ciampolini
Proposal of a new ultra low leakage 10T sub threshold SRAM bitcell. ISOCC (2012)