Frederic Monsieur

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 4

Top Topics

Storage Devices

Relative Importance

State Transitions

Top Venues

Microelectron. Reliab.

Publications

S. Crémer, N. Pelloux, F. Gianesello, Y. Mourier, G. Haury, Tulio Chaves de Albuquerque, Frederic Monsieur, H. Audouin, C. A. Legrand, C. Diouf, J. Azevedo Goncalves, C. Belem Goncalves, C. Durand, N. Vulliet, L. Berthier, Emeline Souchier, P. Garcia, S. Jan, M. Hello, M. L. Rellier, Patrick Scheer, B. Duriez, Xavier Garros, T. Bordignon, F. Paillardet, Pascal Chevalier
40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications. ESSDERC (2023)
C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy
Insight Into HCI Reliability on I/O Nitrided Devices. IRPS (2023)
Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix
Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. IRPS (2023)
Giacomo Garegnani, Vincent Fiori, Gilles Gouget, Frederic Monsieur, Clément Tavernier
Wafer level measurements and numerical analysis of self-heating phenomena in nano-scale SOI MOSFETs. Microelectron. Reliab. 63 (2016)
Frederic Monsieur, Y. Denis, Denis Rideau, V. Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, Joris Lacord
The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. ESSDERC (2014)
Raúl Andrés Bianchi, Christine Raynaud, Floria Blanchet, Frederic Monsieur, Olivier Noblanc
High voltage devices in advanced CMOS technologies. CICC (2009)
Malick Diop, Nathalie Revil, M. Marin, Frederic Monsieur, Pascal Chevalier, Gérard Ghibaudo
Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. Microelectron. Reliab. 48 (8-9) (2008)
D. Lachenal, Alain Bravaix, Frederic Monsieur, Yannick Rey-Tauriac
Degradation mechanism understanding of NLDEMOS SOI in RF applications. Microelectron. Reliab. 47 (9-11) (2007)
G. Ribes, S. Bruyère, M. Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo
power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectron. Reliab. 45 (12) (2005)
Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43 (8) (2003)
G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard
New insights into the change of voltage acceleration and temperature activation of oxide breakdown. Microelectron. Reliab. 43 (8) (2003)
David Roy, S. Bruyère, E. Vincent, Frederic Monsieur
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. Microelectron. Reliab. 42 (9-11) (2002)
Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
Gate oxide Reliability assessment optimization. Microelectron. Reliab. 42 (9-11) (2002)
Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. Microelectron. Reliab. 41 (7) (2001)
Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectron. Reliab. 41 (9-10) (2001)
S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo
Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectron. Reliab. 41 (9-10) (2001)
M. Fadlallah, Arkadiusz Szewczyk, C. Giannakopoulos, B. Cretu, Frederic Monsieur, T. Devoivre, Jalal Jomaah, Gérard Ghibaudo
as gate dielectrics. Microelectron. Reliab. 41 (9-10) (2001)