Xavier Federspiel

Publication Activity (10 Years)

Years Active: 2012-2023
Publications (10 Years): 10

Top Topics

Transmission Electron Microscopy

Event Recognition

State Transitions

Top Venues

Publications

Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix
Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. IRPS (2023)
Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho
New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes. IRPS (2022)
Xavier Federspiel, Abdourahmane Camara, Audrey Michard, Cheikh Diouf, Florian Cacho
HCI Temperature sense effect from 180nm to 28nm nodes. IRPS (2021)
Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho
Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling. IRPS (2021)
Florian Cacho, Lorena Anghel, Xavier Federspiel
Monitoring Setup and Hold Timing Limits. IRPS (2021)
Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS (2021)
Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho
Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. IRPS (2020)
Xavier Federspiel, Cheikh Diouf, Florian Cacho, Emmanuel Vincent
Comparison of variability of HCI induced drift for SiON and HKMG devices. IRPS (2020)
Audrey Michard, Florian Cacho, Damien Celeste, Xavier Federspiel
Global and Local Process Variation Simulations in Design for Reliability approach. IOLTS (2019)
A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, F. Gaillard
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. IRPS (2019)
Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix
Microscopic scale characterization and modeling of transistor degradation under HC stress. Microelectron. Reliab. 52 (11) (2012)